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Effect of buffer thickness on DC and microwave performance of AlGaN/GaN heterojunction field-effect transistors
/forschung/publikationen/effect-of-buffer-thickness-on-dc-and-microwave-performance-of-algangan-heterojunction-field-effect-transistors
The authors compared DC and microwave performance of AlGaN/GaN heterojunction field-effect transistors (HFETs) fabricated on epitaxial structures with different thickness of GaN buffer layer. The…
Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs
/forschung/publikationen/influence-of-the-device-geometry-on-the-schottky-gate-characteristics-of-algangan-hemts
In this work, we investigate the relevance of device geometry to the Schottky gate characteristics of AlGaN/GaN high electron mobility transistors. Changes of three-terminal gate turn-on voltage and…
A 1 W Si-LDMOS Power Amplifier with 40% Drain Efficiency for 6 GHz WLAN Applications
/forschung/publikationen/a-1nbspw-si-ldmos-power-amplifier-with-40-drain-efficiency-for-6nbspghz-wlan-applications
The design and characterization of LDMOS power transistors and amplifiers developed for 6 GHz WLAN applications are presented. Transistors of different size were fabricated in a 0.25 µm…
High-power high-brightness semiconductor lasers based on novel waveguide concepts
/forschung/publikationen/high-power-high-brightness-semiconductor-lasers-based-on-novel-waveguide-concepts
We have designed, fabricated and measured the performance of two types of edge emitting lasers with unconventional waveguides and lateral arrays thereof. Both designs provide high power and low…
High-power ridge waveguide DFB and DFB-MOPA lasers at 1064 nm with a vertical farfield angle of 15°
/forschung/publikationen/high-power-ridge-waveguide-dfb-and-dfb-mopa-lasers-at-1064-nm-with-a-vertical-farfield-angle-of-15
We present high-power ridge waveguide (RW) distributed feedback (DFB) lasers and DFB master optical power amplifiers (DFB-MOPAs) with high-quality beams optimized for pulsed operation and current…
High peak power pulse generation with GHz repetition rate using a Q-switched 1060nm DBR tapered laser
/forschung/publikationen/high-peak-power-pulse-generation-with-ghz-repetition-rate-using-a-q-switched-1060nm-dbr-tapered-laser
Experimental results from a Q-switched three section tapered laser, with an InGaAs triple quantumwell (TQW) active region, consisting of a 2000 µm long tapered element, a 1000 µm ridge waveguide (RW)…
High-power, high-brightness semiconductor tapered diode lasers for the red and near infrared spectral range
/forschung/publikationen/high-power-high-brightness-semiconductor-tapered-diode-lasers-for-the-red-and-near-infrared-spectral-range
The most promising concept to achieve high-output power together with a good beam quality is the tapered laser consisting of a straight ridge waveguide (RW) section and a tapered gain-region. The RW…
Comparison of 650 nm tapered lasers with different lateral geometries at output powers up to 1 W
/forschung/publikationen/comparison-of-650nbspnm-tapered-lasers-with-different-lateral-geometries-at-output-powers-up-to-1nbspw
650 nm tapered laser diodes with nearly diffraction limited beam quality are requested for laser display applications. In this paper, results for 2 mm long 650 nm tapered lasers diodes…
Catastrophic optical mirror damage in diode lasers monitored during single pulse operation
/forschung/publikationen/catastrophic-optical-mirror-damage-in-diode-lasers-monitored-during-single-pulse-operation-1
The catastrophic optical mirror damage (COMD) effect is analyzed for 808 nm emitting diode lasers in single-pulse operation. During each single pulse, both nearfield of the laser emission and thermal…
Imaging Catastrophic Optical Mirror Damage in High-Power Diode Lasers
/forschung/publikationen/imaging-catastrophic-optical-mirror-damage-in-high-power-diode-lasers
We image catastrophic optical mirror damage (COMD) in red- and infraredemitting high-power broad-area diode lasers by combining highly COMD-selective thermography, near-field imaging, scanning…