Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs
C.Y. Lu1,2, E. Bahat-Treidel2, O. Hilt2, R. Lossy2, N. Chaturvedi2, E.Y. Chang1, J. Würfl2 and G. Tränkle2
Published in:
Semicond. Sci. Technol., vol. 25, no. 075005 (2010).
Abstract:
In this work, we investigate the relevance of device geometry to the Schottky gate characteristics of AlGaN/GaN high electron mobility transistors. Changes of three-terminal gate turn-on voltage and gate leakage current on the gate-drain spacing, source-gate spacing and recess depth have been observed. Further examinations comparing device simulations and measurements suggest that gate turn-on voltage is influenced by the distribution of electric potential under the gate region which is related to the geometry. By proper design of the device, high gate turn-on voltage can be obtained for both depletion-mode and recessed enhancement-mode devices.
1 Department of Materials Science and Engineering, National Chiao-Tung University, 1001 University Rd, Hsinchu 300, Taiwan, Republic of China
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
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