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Temporally Resolved Impedance Measurement of Differential, RF-Powered Devices using the Example of a µWave RFID Front-End
/forschung/publikationen/temporally-resolved-impedance-measurement-of-differential-rf-powered-devices-using-the-example-of-a-uwave-rfid-front-end
This work was motivated by the idea to monitor the input impedance of differential front-ends of passive RFIDtransponders depending on their power-consumption. Different methods readily available in…
A 77 GHz Broadband Flip-Chip Transition on LTCC Submount
/forschung/publikationen/a-77-ghz-broadband-flip-chip-transition-on-ltcc-submount
A flip-chip interconnect of a SiGe chip to an LTCC submount with microstrip feeding line is presented. In order to be compatible with cost-effective submount solutions, bumps with 125 µm…
AlGaN/GaN/AlGaN Double Heterojunction HEMTs on n-type SiC Substrates
/forschung/publikationen/alganganalgan-double-heterojunction-hemts-on-n-type-sic-substrates
In this paper, we present a systematic study of AlGaN/GaN/AlGaN double heterojunction high-electron-mobility-transistor devices on n-type SiC substrate and the dependence of the GaN channel layer…
GaN RF Oscillator Used in Space Applications
/forschung/publikationen/gan-rf-oscillator-used-in-space-applications
This paper reports the design and implementation of a RF GaN Oscillator for test in space. This circuit/system will be applied in a space test of the European Space Agency and it will be one of the…
Stable and reproducible AlGaN/GaN-HFET processing highly tolerant for epitaxial quality variations
/forschung/publikationen/stable-and-reproducible-algangan-hfet-processing-highly-tolerant-for-epitaxial-quality-variations
AlGaN/GaN HFETs have been fabricated on epitaxial wafers, using nominally an identical epitaxy procurement specification, procured from 9 different vendors worldwide. A stable and reproducible device…
Comparative study of NH4OH and HCl etching behaviours on AlGaN surfaces
/forschung/publikationen/comparative-study-of-nh4oh-and-hcl-etching-behaviours-on-algan-surfaces
A controlled AlGaN surface preparation method avails to improve the performance of GaN-based HEMT devices. A comparative investigation of chemical treatments by (1:10) NH4OH:H2O and (1:10) HCl:H2O…
Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN Buffer
/forschung/publikationen/normally-off-algangan-hfet-with-p-type-gan-gate-and-algan-buffer
A 1.5 A normally-off GaN transistor for power applications in p-type GaN gate technology with a modified epitaxial layer structure is presented. A higher threshold voltage is achieved while keeping…
A Voltage-Mode Class-S Power Amplifier for the 450MHz Band
/forschung/publikationen/a-voltage-mode-class-s-power-amplifier-for-the-450mhz-band
This paper reports on a novel voltage-mode class-S power amplifier for the 450 MHz band, based on GaN-HEMT MMICs. It achieves a peak output power of 3.4 W for a single tone at 400 MHz, encoded in…
Orientation control of GaN {1122} and {1013} grown on (1010) sapphire by metal-organic vapor phase epitaxy
/forschung/publikationen/orientation-control-of-gan-1122-and-1013-grown-on-1010-sapphire-by-metal-organic-vapor-phase-epitaxy
The growth of semipolar GaN on (100) (m-plane) sapphire was investigated by metal-organic vapor phase epitaxy (MOVPE). Most of the layers were polycrystalline with {1122}, {1013} and {1010} as the…
GaN-based ultraviolet light-emitting diodes with multifinger contacts
/forschung/publikationen/gan-based-ultraviolet-light-emitting-diodes-with-multifinger-contacts
GaN-based ultraviolet light-emitting diodes with identical contact areas but different contact shapes are studied. Interdigitated multifinger contacts with reduced finger width result in a lower…