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Hydride vapor phase epitaxy of GaN boules using high growth rates
/forschung/publikationen/hydride-vapor-phase-epitaxy-of-gan-boules-using-high-growth-rates
The boule-like growth of GaN in a vertical AIXTRON HVPE reactor was studied. Extrinsic factors like properties of the starting substrate and fundamental growth parameters especially the vapor gas…
Fourier domain mode-locked swept source at 1050 nm based on a tapered amplifier
/forschung/publikationen/fourier-domain-mode-locked-swept-source-at-1050nbspnm-based-on-a-tapered-amplifier
While swept source optical coherence tomography (OCT) in the 1050 nm range is promising for retinal imaging, there are certain challenges. Conventional semiconductor gain media have limited…
Structure investigations of nonpolar GaN layers
/forschung/publikationen/structure-investigations-of-nonpolar-gan-layers
Summary: The microstructure of nonpolar m-plane (100) oriented GaN layers deposited on (100)γ -LiAlO2 was analysed by transmission electron microscopy. This study shows that the films contain a large…
Diode-pumped gigahertz femtosecond Yb:KGW laser with a peak power of 3.9 kW
/forschung/publikationen/diode-pumped-gigahertz-femtosecond-ybkgw-laser-with-a-peak-power-of-39nbspkw
We present a diode-pumped Yb:KGW laser with a repetition rate of 1 GHz and a pulse duration of 281 fs at a wavelength of 1041 nm. A high brightness distributed Bragg reflector tapered…
Broadband 20-Ω 20-W Load Suitable for Characterization of Switch-Mode Amplifiers
/forschung/publikationen/broadband-20-o-20-w-load-suitable-for-characterization-of-switch-mode-amplifiers
This paper reports on a broadband dc ground isolated 20-Ω absorber for powers of up to 20 W. The realized absorber achieves reflections (referenced to 20Ω) below-10 dB over almost two frequency…
Narrow Linewidth DFB Lasers Emitting Near a Wavelength of 1064 nm
/forschung/publikationen/narrow-linewidth-dfb-lasers-emitting-near-a-wavelength-of-1064-nm
We report on the realization of narrow linewidth high power DFB diode lasers emitting near 1064 nm in stable longitudinal and lateral single mode. The linewidth is analyzed in dependence of the…
Temporally Resolved Impedance Measurement of Differential, RF-Powered Devices using the Example of a µWave RFID Front-End
/forschung/publikationen/temporally-resolved-impedance-measurement-of-differential-rf-powered-devices-using-the-example-of-a-uwave-rfid-front-end
This work was motivated by the idea to monitor the input impedance of differential front-ends of passive RFIDtransponders depending on their power-consumption. Different methods readily available in…
A 77 GHz Broadband Flip-Chip Transition on LTCC Submount
/forschung/publikationen/a-77-ghz-broadband-flip-chip-transition-on-ltcc-submount
A flip-chip interconnect of a SiGe chip to an LTCC submount with microstrip feeding line is presented. In order to be compatible with cost-effective submount solutions, bumps with 125 µm…
AlGaN/GaN/AlGaN Double Heterojunction HEMTs on n-type SiC Substrates
/forschung/publikationen/alganganalgan-double-heterojunction-hemts-on-n-type-sic-substrates
In this paper, we present a systematic study of AlGaN/GaN/AlGaN double heterojunction high-electron-mobility-transistor devices on n-type SiC substrate and the dependence of the GaN channel layer…
GaN RF Oscillator Used in Space Applications
/forschung/publikationen/gan-rf-oscillator-used-in-space-applications
This paper reports the design and implementation of a RF GaN Oscillator for test in space. This circuit/system will be applied in a space test of the European Space Agency and it will be one of the…