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Stable and reproducible AlGaN/GaN-HFET processing highly tolerant for epitaxial quality variations
/forschung/publikationen/stable-and-reproducible-algangan-hfet-processing-highly-tolerant-for-epitaxial-quality-variations
AlGaN/GaN HFETs have been fabricated on epitaxial wafers, using nominally an identical epitaxy procurement specification, procured from 9 different vendors worldwide. A stable and reproducible device…
Comparative study of NH4OH and HCl etching behaviours on AlGaN surfaces
/forschung/publikationen/comparative-study-of-nh4oh-and-hcl-etching-behaviours-on-algan-surfaces
A controlled AlGaN surface preparation method avails to improve the performance of GaN-based HEMT devices. A comparative investigation of chemical treatments by (1:10) NH4OH:H2O and (1:10) HCl:H2O…
Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN Buffer
/forschung/publikationen/normally-off-algangan-hfet-with-p-type-gan-gate-and-algan-buffer
A 1.5 A normally-off GaN transistor for power applications in p-type GaN gate technology with a modified epitaxial layer structure is presented. A higher threshold voltage is achieved while keeping…
A Voltage-Mode Class-S Power Amplifier for the 450MHz Band
/forschung/publikationen/a-voltage-mode-class-s-power-amplifier-for-the-450mhz-band
This paper reports on a novel voltage-mode class-S power amplifier for the 450 MHz band, based on GaN-HEMT MMICs. It achieves a peak output power of 3.4 W for a single tone at 400 MHz, encoded in…
Orientation control of GaN {1122} and {1013} grown on (1010) sapphire by metal-organic vapor phase epitaxy
/forschung/publikationen/orientation-control-of-gan-1122-and-1013-grown-on-1010-sapphire-by-metal-organic-vapor-phase-epitaxy
The growth of semipolar GaN on (100) (m-plane) sapphire was investigated by metal-organic vapor phase epitaxy (MOVPE). Most of the layers were polycrystalline with {1122}, {1013} and {1010} as the…
GaN-based ultraviolet light-emitting diodes with multifinger contacts
/forschung/publikationen/gan-based-ultraviolet-light-emitting-diodes-with-multifinger-contacts
GaN-based ultraviolet light-emitting diodes with identical contact areas but different contact shapes are studied. Interdigitated multifinger contacts with reduced finger width result in a lower…
Modeling GaN Power Transistors
/forschung/publikationen/modeling-gan-power-transistors
Modeling GaN transistors is still a matter of research. The technology is still quite young and not yet fully mature. A second issue is the fact that GaN transistors are commonly used as packaged…
Assessment of power-transistor package models: distributed versus lumped approach
/forschung/publikationen/assessment-of-power-transistor-package-models-distributed-versus-lumped-approach
Power transistors basically consist of a number of active transistors that are mounted in parallel inside the package. High powers require large transistor sizes, which translates into significant…
Efficient quasi-three-level Nd:YAG laser at 946 nm pumped by a tunable external cavity tapered diode laser
/forschung/publikationen/efficient-quasi-three-level-ndyag-laser-at-946-nm-pumped-by-a-tunable-external-cavity-tapered-diode-laser
Using a tunable external cavity tapered diode laser (ECDL) pumped quasi-three-level Nd:YAG laser, a fivefold reduction in threshold and twofold increase in slope efficiency is demonstrated when…
A 60 GHz 18 dBm Power Amplifier Utilizing 0.25 µm SiGe HBT
/forschung/publikationen/a-60-ghz-18-dbm-power-amplifier-utilizing-025nbspum-sige-hbt
This paper presents a fully integrated 60 GHz two stage power amplifier using cascode topology. The design procedure and measurement results are presented. The PA is implemented in a 0.25 µm…