A. Klehr, B. Sumpf, K.H. Hasler, J. Fricke, A. Liero, Th. Hoffmann, G. Erbert and G. Tränkle

Published in:

Proc. SPIE, vol. 7616, no. 7616J (2010).

Abstract:

Experimental results from a Q-switched three section tapered laser, with an InGaAs triple quantumwell (TQW) active region, consisting of a 2000 µm long tapered element, a 1000 µm ridge waveguide (RW) section and a 1000 µm long passive grating section with a 6th order surface grating were fabricated and investigated. For the generation of short optical pulses the tapered section was biased with a dc-current and the RW absorber section was modulated by a 1 GHz sinusoidal current. By biasing the tapered section with 4 A cw current and GHz sinusoidal modulation of the RW section, short pulses of ~75 ps width and a pulse power of 6.3 W corresponding to 470 pJ pulse energy is reached. The Q-switched pulses are single mode with a central emission wavelength of ~1064 nm and a FWHM spectral width = 0.05 nm.

Index Terms:

semiconductor laser, DBR laser, tapered DBR laser, high power optical pulse generation, GHz modulation.

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