Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
Modeling GaN Power Transistors
/forschung/publikationen/modeling-gan-power-transistors
Modeling GaN transistors is still a matter of research. The technology is still quite young and not yet fully mature. A second issue is the fact that GaN transistors are commonly used as packaged…
Assessment of power-transistor package models: distributed versus lumped approach
/forschung/publikationen/assessment-of-power-transistor-package-models-distributed-versus-lumped-approach
Power transistors basically consist of a number of active transistors that are mounted in parallel inside the package. High powers require large transistor sizes, which translates into significant…
Efficient quasi-three-level Nd:YAG laser at 946 nm pumped by a tunable external cavity tapered diode laser
/forschung/publikationen/efficient-quasi-three-level-ndyag-laser-at-946-nm-pumped-by-a-tunable-external-cavity-tapered-diode-laser
Using a tunable external cavity tapered diode laser (ECDL) pumped quasi-three-level Nd:YAG laser, a fivefold reduction in threshold and twofold increase in slope efficiency is demonstrated when…
A 60 GHz 18 dBm Power Amplifier Utilizing 0.25 µm SiGe HBT
/forschung/publikationen/a-60-ghz-18-dbm-power-amplifier-utilizing-025nbspum-sige-hbt
This paper presents a fully integrated 60 GHz two stage power amplifier using cascode topology. The design procedure and measurement results are presented. The PA is implemented in a 0.25 µm…
Well width study of InGaN multiple quantum wells for blue-green emitter
/forschung/publikationen/well-width-study-of-ingan-multiple-quantum-wells-for-blue-green-emitter
InGaN/GaN multiple quantum well structures emitting in the blue/green wavelength region were grown by metal organic vapor phase epitaxy. By reducing the quantum well growth time the influence of the…
GaN devices for communication applications - evolution of amplifier architectures
/forschung/publikationen/gan-devices-for-communication-applications-evolution-of-amplifier-architectures
This paper presents the design and implementation of power amplifiers using high-power gallium nitride (GaN) high electronic mobility transistor (HEMT) powerbars and monolithic microwave integrated…
AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low RON × A
/forschung/publikationen/alganganganc-back-barrier-hfets-with-breakdown-voltage-of-over-1nbspkv-and-low-ronnbspxnbspa
A systematic study of GaN-based heterostructure field-effect transistors with an insulating carbon-doped GaN back barrier for high-voltage operation is presented. The impact of variations of carbon…
Impact of Receiver Bandwidth and Nonlinearity on Noise Measurement Methods
/forschung/publikationen/impact-of-receiver-bandwidth-and-nonlinearity-on-noise-measurement-methods
The article has dealt with problems of noise measurement located on the receiver side. The influence of noise bandwidth B and receiver gain GREC on the measured power level FNwas discussed. The…
Compact HBT modeling: status and challenges
/forschung/publikationen/compact-hbt-modeling-status-and-challenges
HBTs show much better performance compared to their BJT predecessors, but also require enhanced models for reliable circuit design. This talk addresses which enhancements are required and available…
Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes
/forschung/publikationen/optical-polarization-characteristics-of-ultraviolet-inalgan-multiple-quantum-well-light-emitting-diodes
The polarization of the in-plane electroluminescence of (0001) orientated (In)(Al)GaN multiple quantum well light emitting diodes in the ultraviolet-A and ultraviolet-B spectral range has been…