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Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm
/forschung/publikationen/tunable-high-power-narrow-spectrum-external-cavity-diode-laser-based-on-tapered-amplifier-at-668nbspnm
A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to…
Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates
/forschung/publikationen/laser-scribing-for-facet-fabrication-of-ingan-mqw-diode-lasers-on-sapphire-substrates
In this letter, a novel method for the fabrication of high-quality facets for III-nitride lasers grown on c-plane sapphire substrates as well as on GaN substrates is presented. Based on a laser…
InGaN-GaN Disk Laser for Blue-Violet Emission Wavelengths
/forschung/publikationen/ingan-gan-disk-laser-for-blue-violet-emission-wavelengths
An optically pumped InGaN-GaN surface-emitting laser with external cavity emitting at 393 nm has been realized. The peak output power is 300W, the slope efficiency 3.5%, and the threshold pump…
Determination of GaN HEMT reliability by monitoring IDSS
/forschung/publikationen/determination-of-gan-hemt-reliability-by-monitoring-idss
In this paper, we investigate the importance and necessity to determine the reliability of GaN HEMT devices by monitoring IDSS during accelerated DC life-test measurements at elevated ambient…
Optical and Structural Properties of In0.08GaN/In0.02GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies
/forschung/publikationen/optical-and-structural-properties-of-in008ganin002gan-multiple-quantum-wells-grown-at-different-temperatures-and-with-different-indium-supplies
The optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multiple quantum wells (MQWs) grown at different temperatures and with different supplies of indium were analyzed by atomic force…
One-Watt level mid-IR output, singly resonant, continuous-wave optical parametric oscillator pumped by a monolithic diode laser
/forschung/publikationen/one-watt-level-mid-ir-output-singly-resonant-continuous-wave-optical-parametric-oscillator-pumped-by-a-monolithic-diode-laser
We report more than 1.1 Watt of idler power at 3373 nm in a singly resonant optical parametric oscillator (SRO), directly pumped by a single-frequency monolithic tapered diode laser. The…
Facet formation for laser diodes on nonpolar and semipolar GaN
/forschung/publikationen/facet-formation-for-laser-diodes-on-nonpolar-and-semipolar-gan
Different technologies have been evaluated in order to create vertical and smooth facets for GaN-based laser diodes on nonand semipolar substrates. Laser assisted scribing and cleaving proved to be a…
AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)
/forschung/publikationen/alganganalgan-dh-hemts-breakdown-voltage-enhancement-using-multiple-grating-field-plates-mgfps
GaN-based high-electron mobility transistors with planar multiple grating field plates (MGFPs) for high-voltage operation are described. A synergy effect with additional electron channel confinement…
RF Class-S Power Amplifiers: State-of-the-Art Results and Potential
/forschung/publikationen/rf-class-s-power-amplifiers-state-of-the-art-results-and-potential
This paper reports recent results on a current-mode class-S power amplifier for the 450 MHz band, based on GaNHEMT MMICs. We achieve a peak output power of 8.7 W for a single tone at…
Laser Driver Switching 20 A with 2 ns Pulse Width Using GaN
/forschung/publikationen/laser-driver-switching-20nbspa-with-2nbspns-pulse-width-using-gan
A GaN-HEMT-based circuit is presented capable of switching 20 A of current with less than about 0.5 ns rise and fall time. This demonstrates the potential of GaN transistors for highcurrent…