M.P. Semtsiv^a, S. Dressler^a, U. Muller^a, S. Knigge^b , M. Ziegler^a, W.T. Masselink^a

Published in:

IEEE J. Quantum Electron., vol. 42, no. 5, pp. 490- 493 (2006).

Abstract:

We demonstrate a shallow-ridge quantum-cascade laser (QCL) with performance comparable or better than that of deep-ridge QCLs fabricated from the same wafer. The shallow-ridge QCL emits at /spl ap/4 /spl mu/m with a 4.6-4.8 kA/cm² threshold current density at room temperature which is similar to the deep-ridge QCL. At the same time the shallow-ridge QCL shows a better temperature stability, T₀=160 K, than the deep-ridge QCL, with T₀=120 K. The increase in the characteristic temperature of the shallow-ridge laser compared to the deep-ridge laser results from the improved heat dissipation out of the laser ridge through the lateral heat flow. Lateral spreading of the injection current-usually a drawback of shallow-ridge lasers-is suppressed by proton implantation into the strain-compensated InGaAs-AlAs active region layers on either side of the ridge. In contrast to the case of In_0.53Ga_0.47As layers and of In_0.53Ga_0.47As-In_0.52Al_0.48As heterostructures lattice matched to InP, the proton implantation of strain-compensated In_0.73Ga_0.27As-AlAs heterostructure on InP creates deep (180 meV) carrier traps, resulting in this material being electrically insulating even at room temperature.

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