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Mathematik trifft Halbleitertechnologie: Entwicklung neuer und kompakter UV-C-Laser für Medizin und Biotechnologie
/media-center/presseinformationen/mathematik-trifft-halbleitertechnologie-entwicklung-neuer-und-kompakter-uv-c-laser-fuer-medizin-und-biotechnologie
Die Leibniz-Gemeinschaft fördert das Verbundprojekt „UV-Laser - Von der Modellierung und Simulation zur Technologie (UVSimTech)“ über drei Jahre mit knapp 1 Mio. € im Rahmen des Leibniz-Wettbewerbes
Basis for improved UV LEDs – high-quality aluminum nitride by high-temperature annealing
/forschung/forschungsnews/basis-for-improved-uv-leds-high-quality-aluminum-nitride-by-high-temperature-annealing
The combination of high-temperature annealing with epitaxial growth on a sapphire surface results in aluminum nitride base layers with very low defect density. This increases the light emission and…
Optimisation of SHG for high-brightness semiconductor laser diode radiation with large aberrations
/forschung/publikationen/optimisation-of-shg-for-high-brightness-semiconductor-laser-diode-radiation-with-large-aberrations
The optimisation of SHG by semiconductor diode lasers is treated by taking into account three items: A SHG-merit function for using quasi phase matching, the optimisation of micro optics and possible…
Highly strained InGaAs/GaAs quantum wells emitting beyond 1.2 µm
/forschung/publikationen/highly-strained-ingaasgaas-quantum-wells-emitting-beyond-12nbspmicrom
Highly strained Inx Ga1-x As quantum wells (QWs) with GaAs barriers emitting around 1.2 µm are grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE) at low growth…
Large-Signal Modeling of High-Voltage GaAs Power HBTs
/forschung/publikationen/large-signal-modeling-of-high-voltage-gaas-power-hbts
This paper presents modeling results for newly developed InGaP/GaAs power HBTs operating at bias voltages up to Vce = 26 V. The devices are flip-chip mounted for heat-sinking and…
A New Multiport Measurement-Method Using a Two-Port Network Analyzer
/forschung/publikationen/a-new-multiport-measurement-method-using-a-two-port-network-analyzer
A new method is presented how to characterize multiport devices using a two-port vector network-analyzer (VNA). Up to now, at least one of the port terminations had to be fully known to measure the…
W-Band Flip-Chip VCO in Thin-Film Environment
/forschung/publikationen/w-band-flip-chip-vco-in-thin-film-environment
A flip-chip packaging approach for W-band GaAs chips is presented using thin-film structures on silicon as carrier substrate. Reliability investigations indicate that, depending on bump size, the CTE…
Low Phase Noise X-Band Push-Push Oscillator with Frequency Divider
/forschung/publikationen/low-phase-noise-x-band-push-push-oscillator-with-frequency-divider
A MMIC Colpitts oscillator in push-push configuration with integrated frequency divider using InGaP/GaAs HBTs is pre-sented. The output is taken from the second harmonic port while the fundamental…
A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analytical and Experimental Study
/forschung/publikationen/a-40-gbps-gaas-hbt-distributed-amplifier-with-an-over-ft-cut-off-frequency-analytical-and-experimental-study
The bandwidth potential of HBT distributed amplifiers following the traveling-wave concept (TWA) is studied. Basic parameters are the transistor characteristics as well as the losses of the…
Microscopic theory for the valence intersubband absorption of quantum wells
/forschung/publikationen/microscopic-theory-for-the-valence-intersubband-absorption-of-quantum-wells
In this paper we focus on the temperature dependence and on a detailed analysis of the interplay between Coulomb effects at Hartree-Fock level,namely:subband shifts,exchange and depolarization shifts…