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Consistent Modeling of Capacitances and Transit Times of GaAs-Based HBTs
/forschung/publikationen/consistent-modeling-of-capacitances-and-transit-times-of-gaas-based-hbts
This paper investigates how time delays and capacitances observed under small-signal conditions can be consistently accounted for in heterojunction bipolar transistor (HBT) large-signal models. The…
Optimized two-layer overgrowth of a lateral strain-modulated nanostructure
/forschung/publikationen/optimized-two-layer-overgrowth-of-a-lateral-strain-modulated-nanostructure
Recently it has been shown that lateral carrier confinement in an InGaAs quantum well (QW) embedded in GaAs can be achieved by using a laterally patterned InGaP stressor layer on top of the…
Mode-locked laser operation of epitaxially grown Yb:KLu(WO4)2 composites
/forschung/publikationen/mode-locked-laser-operation-of-epitaxially-grown-ybkluwo42-composites
Mode locking based on an epitaxial composite of the monoclinic double tungstate crystal Yb:KLu(WO4)2 is realized. A 100 µm thin Yb:KLu(WO4)2 layer grown on a KLu(WO4)2 substrate is used as…
Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser
/forschung/publikationen/blue-489-nm-picosecond-pulses-generated-by-intracavity-frequency-doubling-in-a-passively-mode-locked-optically-pumped-semiconductor-disk-laser
We report the generation of blue 489-nm picosecond laser pulses by in-tracavity second-harmonic generation in a mode-locked optically pumped InGaAs vertical-external-cavity surface-emitting laser.…
Tailoring of high-temperature photoluminescence in InAs/GaAs bilayer quantum dot structures
/forschung/publikationen/tailoring-of-high-temperature-photoluminescence-in-inasgaas-bilayer-quantum-dot-structures
Temperature-dependent photoluminescence is investigated in bilayer InAs/GaAs quantum dot structures with constant InAs deposition θ1 in the seed layer, but variable deposition θ2 in both…
980-nm DBR lasers using higher order gratings defined by i-line lithography
/forschung/publikationen/980-nm-dbr-lasers-using-higher-order-gratings-defined-by-i-line-lithography
We report on the simultaneous definition and fabrication of Bragg gratings and ridge waveguides using wafer stepper lithography and reactive ion etching, respectively. Single-longitudinal mode…
High-power ridge-wavequide broad-area lasers with a DFB resonator in the wavelength range 760- to 790-nm
/forschung/publikationen/high-power-ridge-wavequide-broad-area-lasers-with-a-dfb-resonator-in-the-wavelength-range-760-to-790-nm
High-power ridge-wavequide broad-area lasers with a DFB resonator in the wavelength range 760- to 790-nm A. Klehr, M. Braun, F. Bugge, G. Erbert, J. Fricke, A. Knauer,…
High-power 980-nm DFB diode lasers with a small vertical farfield divergence
/forschung/publikationen/high-power-980-nm-dfb-diode-lasers-with-a-small-vertical-farfield-divergence-1
We report on FP and DFB lasers with a vertical farfield angle of only 18° due to a super large optical cavity. Details of the structure and the characteristics up to 1 Watt optical power…
Passively cooled 940nm laser bar with 73% wall-plug efficiency and high reliability at 98 W quasi-cw output power
/forschung/publikationen/passively-cooled-940nm-laser-bar-with-73-wall-plug-efficiency-and-high-reliability-at-98-w-quasi-cw-output-power-1
Laser bars with low divergency and filling factor were operated on passively cooled heat sinks at 25°C. The maximum wall-plug efficiency was 73 % at 70 W. Excellent reliability was…
852-nm distributed-feedback diode lasers for atomic clocks and laser cooling
/forschung/publikationen/852-nm-distributed-feedback-diode-lasers-for-atomic-clocks-and-laser-cooling-1
We report on narrow linewidth DFB RW lasers emitting at the caesium D2 resonance wavelength. The devices operate in a single lateral and longitudinal mode up to 250 mW optical power with a…