High Output Power Ultra-Wideband Distributed Amplifier in InP DHBT Technology Using Diamond Heat Spreader
IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, USA, Aug. 4-6, Virtual Event, ISBN 978-1-7281-6815-9, pp. 401-404 (2020).
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This work reports on a highly linear and high output power ultra-wideband distributed amplifier with improved thermal properties using a diamond layer for heat spreading. The performances of a circuit with and without the diamond heat spreader are compared. Adding the diamond yields a 4 dB improvement in 1 dB compression point (P1dB) and saturated output power (Psat). Intermodulation distortion has also been measured and the amplifier achieves 24 dBm OIP3 over a bandwidth larger than 60 GHz. In terms of small-signal characteristics, the circuit shows 12 dB gain and low deviation from linear phase, similarly to the non-diamond version. This amplifier demonstrates highest P1dB, OIP3, and PAE values as compared to other technologies with similar or higher bandwidth.
1 Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
2 Technical University of Denmark (DTU), Kgs. Lyngby, Denmark
3 Johann Wolfgang Goethe-Universität, Frankfurt am Main, Germany
distributed amplifier, InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC), travelling wave amplifier.