J.-P. Koester¹, J. Fricke¹, H. Wenzel¹, P. Della Casa¹, K. Akritidis^2,3, M. Billet², M. Kiewiet², J. Brouckaert³, P. Van Dorpe³, B. Kuyken², A. Knigge¹, M. Weyers¹

Published in:

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2025), Munich, Germany, Jun. 23-27, ISBN: 979-8-3315-1252-1, cb-7-3 (2025).

Abstract:

GaAs-based quantum well emitters can cover the spectral range from 600 nm to 1200 nm, which is of interest for applications such as quantum optics and biosensing [1]. These applications often require narrow linewidth and widely tunable laser sources based on photonic integrated circuits (PICs). Although recent progress has been made in the field of monolithic GaAs PICs, the heterogeneous integration of GaAs chips with SiN PICs is considered to offer better system performance and to be more scalable and flexible [1,2]. A promising approach for heterogeneous integration is the micro-transfer printing technology, which relies on the sub-micron precision transfer of amplifier coupons from a III-V source wafer to a target wafer containing the passive waveguide circuit [3].

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