K. Tetzner, H. Halhoul, M.D. Cuallo, and O. Hilt

Published in:

IEEE Electron Device Lett., vol. 46, no. 9, pp. 1601-1604 (2025).

Abstract:

This work reports on the high-voltage switching performance of lateral β-Ga₂O₃ MOSFET devices, emphasizing dynamic behavior under kilowatt-class operating conditions. Large-periphery devices with a total gate width of 92 mm were characterized using pulsed I-V and transient switching measurements. Pulsed output characteristics revealed a peak drain current of 13 A – the highest reported for a β-Ga₂O₃ transistor—alongside an on-resistance of 720 mΩ. High-voltage switching transients were captured using on-wafer measurements and the devices were subjected to off-state drain voltages up to 350 V. The measured on-state drain current degraded from 8.5 A to 2.5 A as the off-state drain voltage increased from 10 V to 350 V, corresponding to a fourfold increase of the dynamic on-state resistance. This degradation is attributed to charge trapping at interface states or within the channel, possibly related to Fe-doping or implantationinduced defects. The observed switching dispersion correlates with low channel mobility and underscores the importance of optimizing the process technology as well as material quality. Nevertheless, the characterization of switching transients at 4 A / 300 V demonstrates the first kilowatt-class switching operation in β-Ga₂O₃ power transistors, underscoring their potential for next-generation power electronics applications.

Index Terms:

Ga₂O₃, MOSFET, power device, dynamic switching characteristics, dispersion effects.

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