Switch-Integrated GaN LNAs: A Technology-focused Analysis

M. Krishnaji Rao^#, P. Beleniotis^$, T. Hoffmann^#, H. Yazdani^#+, A. Wentzel^#, M. Rudolph^#$

Published in:

Proc. 20th European Microwave Integrated Circuits Conference (EuMIC 2025), Utrecht, Netherlands, Sep. 22-23, ISBN: 978-2-87487-082-8, pp. 29-32 (2025).

Abstract:

This paper presents the first circuit-level analysis of a two-stage GaN-HEMT LNA with an integrated switch, comparing two distinct technologies: one with a standard passivation layer (Type A) and another featuring an advanced passivation layer (Type B). Through a detailed evaluation of their performance in both amplification and isolation modes, the study highlights Type B as a significant advancement over Type A. Leveraging technological enhancements, including an improved passivation layer and slightly optimized component matching, Type B demonstrates superior performance. The results are compelling, with Type B achieving a gain of 19 dB, a low noise figure of 1.17 dB, and small-signal isolation exceeding 30 dBm at 5.2 GHz. These achievements establish Type B as a formidable option for future 5G telecommunication systems, offering a performance that challenges traditional designs that use separate switches.

Keywords:

GaN, HEMT, MMIC, transceiver, LNA, 5G.

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