Impact of Dielectric Insulation and Protection Layers on 233 nm Far-UVC LEDs
H.K. Cho, J. Rass, J. Ruschel, I. Ostermay, A. Koyucuoglu, J.E. Boschker, T. Kolbe, and S. Einfeldt
Published in:
IEEE Photonics Technol. Lett., vol. 37, no. 15, pp. 829-832 (2025).
Abstract:
This letter investigates the effect of dielectric insulation or protection layers such as SiO2 and SiNx on the performance and reliability of 233 nm far-UVC LEDs. The study includes the effect of n-contact annealing of chips with these layers. Results show that introducing a protection of the p-GaN surface and mesa edges by SiO2 and combining it with an insulation by SiNx enhances the device performance. LEDs with a SiO2 protection layer that undergoes an n-contact annealing at 700 °C offer minimum leakage and degradation.
Ferdinand-Braun-Institut, 12489 Berlin, Germany
Index Terms:
Deep UV, light emitting diodes (LEDs), dielectric insulation, reliability, hydrogen.
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