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Monolithically Integrated GaAs-based Ring-Resonator-Coupled Lasers

J.-P. Koester, H. Wenzel, J. Fricke, P. Sammeta, O. Brox, P. Della Casa, A. Knigge

Published in:

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2025), Munich, Germany, Jun. 23-27, ISBN: 979-8-3315-1252-1, cb-6-3 (2025).

Abstract:

Applications such as spectroscopy, light detection and ranging (LIDAR), and optical coherence tomography (OCT) often require narrow linewidth, widely tunable laser sources. In the past, such laser systems were benchtop setups of bulk optical components. In recent years, however, progress has been made in integrating comparable systems down to chip size [1–3]. These photonic integrated circuit (PIC)-based lasers typically use coupled ring resonators as Vernier filters to tune the laser wavelength [3]. Most groups have focused their efforts on the hybrid or heterogeneous integration of III-V gain chips with passive PIC chips [1,2]. In this contribution we present our recent advancements to monolithically integrate GaAs-based ring-resonator coupled laser emitting around 1050 nm [4].

Ferdinand-Braun-Institut (FBH), Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

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