Analysis of the Switching Threshold in Dual-Level Class-G Modulated Power Amplifiers
Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), Taormina, Italy, Oct. 1-2 (2015).
© Copyright 2015 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
A two-level class-G RF power amplifier system is analyzed. Measurements show that for low output powers there is an optimum switching threshold valid for both PAE and linearity while for higher output powers they diverge and there is a trade-off between PAE and linearity. This creates a region where the output power can be reduced from maximum to 2 dB (58%) back-off in which the PAE and linearity can be kept constant. Furthermore the power amplifier properties can be dynamically adjusted by changing the switching threshold voltage of the class-G modulator.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
RF power amplifiers, class-G, supply modulation, linearization, digital predistortion.