AlGaN/GaN/GaN:C back-barrier Schottky diodes for power switching

E. Bahat-Treidel, O. Hilt, R. Zhytnytska, E. Cho, J. Würfl and G. Tränkle

Published in:

35rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Catania, Italy, May 29 - Jun 1, ISBN 978-88-8080-123-8, pp. 165-166 (2011).


A GaN-based heterostructure lateral Schottky diode with insulating carbon-doped GaN back-barrier with high reverse bias blocking capability for high voltage operation in power switching is presented. The device combines the low onset voltage, 0.46 V, of a recessed Schottky contact with low leakage current at reverse bias and the good blocking capability of a GaN:C back-barrier. Devices with a 15 µm anode cathode separation exhibit leakage current as low as 6 × 10-6 A, reverse blocking bias over 1000 V and on-state resistance of 1.48 mΩ × cm2.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany