1 W reliable operation of broad area lasers and 8 W reliable operation of 5 mm wide laser bars at 650 nm

B. Sumpf, M. Zorn, J. Fricke, P. Ressel, H. Wenzel, G. Erbert, M. Weyers, G. Tränkle

Published in:

Proc. SPIE, vol. 6876, no. 68760T (2008).

© SPIE 2008. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the SPIE.


Reliability tests for 650 nm broad area lasers and bars with GaInP quantum wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers will be presented.
Reliable operation of broad area lasers with 100 µm stripe width at 1.0 W output power over 10,000 h and of 5 mm wide bars with ten 100 µm wide emitters (filling factor 20%) at 8 W over 4,000 h will be reported. 6 mm wide bars with twelve 60 µm wide emitters (filling factor 12%) at 7 W showed a mean time to failure of 3,750 h.

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany


Semiconductor lasers, red laser bars, CW lasers, laser reliability