1 W reliable operation of broad area lasers and 8 W reliable operation of 5 mm wide laser bars at 650 nm
Proc. SPIE, vol. 6876, no. 68760T (2008).
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Reliability tests for 650 nm broad area lasers and bars with GaInP quantum wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers will be presented.
Reliable operation of broad area lasers with 100 µm stripe width at 1.0 W output power over 10,000 h and of 5 mm wide bars with ten 100 µm wide emitters (filling factor 20%) at 8 W over 4,000 h will be reported. 6 mm wide bars with twelve 60 µm wide emitters (filling factor 12%) at 7 W showed a mean time to failure of 3,750 h.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Semiconductor lasers, red laser bars, CW lasers, laser reliability