High-Sensitivity Wideband THz Detectors Based on GaN HEMTs with Integrated Bow-Tie Antennas
M. Bauer1, A. Rämer2, S. Boppel1, S. Chevtchenko2, A. Lisauskas1,3, W. Heinrich2, V. Krozer1,2 and H.G. Roskos1
Published in:
Proc. 10th European Microwave Integrated Circuits Conf. (EuMiC 2015), Paris, France, Sep. 7-8, pp. 1-4 (2015).
Abstract:
This paper reports on antenna-coupled field-effect transistors for the detection of terahertz radiation (TeraFETs), based on AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs are integrated on-chip with bow-tie antennas. The broadband sensitivity of the fabricated detectors was characterized in the frequency range from 0.4 up to 1.18 THz. We reach record values of optical noise equivalent power (NEP) down to 57 pW/√Hz at 0.9 THz. These values are the result of antenna and fabrication process optimization as well as modelling including plasmonic effects.
1 Physikalisches Institut, Johann Wolfgang Goethe-Universität, Frankfurt am Main, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
3 Department of Radiophysics, Vilnius University, Vilnius, Lithuania
Keywords:
GaN HEMT terahertz detectors, plasmonic detection, integrated field-effect transistors, bow-tie antenna.
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