1. Ferdinand-Braun-Institut
  2. Forschung
  3. Publikationen
  4. Enhancement of channel conduct ...

Publikationen

Konferenzbeiträge - bei Terminen
Eine Reihe von Hochformatbroschüren ist aufrecht angeordnet. Die Cover zeigen Titel und Informationen zu verschiedenen Themen.

Dissertationen
Collage aus mehreren Patentschriften aus verschiedenen Ländern, darunter Deutschland, die USA und Japan. Es werden Informationen wie Aktenzeichen, Anmeldedaten und Patentnummern präsentiert.

Patente

Enhancement of channel conductivity in AlGaN/GaN heterostructure field effect transistors by AlGaN:Si back barrier

E. Cho, F. Brunner, R. Zhytnytska, P. Kotara, J. Würfl, and M. Weyers

Published in:

Appl. Phys. Lett., vol. 99, no. 103505 (2011).

Abstract:

Heterostructure field effect transistors with three AlGaN/GaN interfaces were designed and investigated. A Si-doped AlGaN back barrier was used to compensate for the reduction of channel conductivity due to a carbon doped semi-insulating GaN buffer layer. Simulation using a one dimensional Poisson-Schrödinger solver showed an enhancement of the charge carrier density which was then confirmed experimentally. Hall and magnetic field dependent mobility measurements proved the Si-doped AlGaN back barrier layer causes neither degradation of electron mobility nor a parasitic conduction channel. Id,max of the transistors was enhanced by a factor of 1.5-2 without decreasing the off-state breakdown voltage.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

© 2011 American Institute of Physics. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the American Institute of Physics.

Full version in pdf-format.