Influence of minority carrier lifetime on photoresponse characteristics of visible-blind Al0.25Ga0.75N MSM photodetectors
J. Schlegel1, M. Martens1, F. Brunner2, S. Einfeldt2, M. Weyers2, and M. Kneissl1,2
Published in:
11th Int. Conf. on Numerical Simulation of Optoelectronic Devices (NUSOD 2011), Rom, Italy, Sep. 5-8 (2011).
Abstract:
We report on numerical simulations of photoresponse characteristics of visible-blind Al0.25Ga0.75NN metalsemiconductor- metal (MSM) photodetectors. Good agreement with experimental data is obtained with an assumed minority carrier lifetime of 30 ps. The carrier transit times between the electrodes of the devices are in the same range, consequently this parameter strongly influences the recombination processes of photogenerated carriers and the resulting photocurrent under UV illumination. In order to investigate this in detail, we have analyzed I-V characteristics for different minority carrier lifetimes. The simulation results predict up to one order of magnitude higher photocurrents for increased lifetimes in the absorber layer.
1 Technische Universität Berlin, Institute of Solid State Physics, EW 6-1, Hardenbergstrasse 36, 10623 Berlin, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
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