Electrical and EDX-analysis of CF4 and Ar plasma treated AlGaN/GaN HEMTs
P. Kotara1, O. Hilt1, H. Kirmse2, J. Würfl1, W. Neumann2, and G. Tränkle1
Published in:
phys. stat. sol. (c), vol. 8, no. 7-8, pp. 2207-2209 (2011).
Abstract:
In this paper we have investigated the effect of CF4 plasma treatment on AlGaN/GaN HEMTs and compared it with Ar plasma treated devices. We have investigated the electrical characteristics of the devices using transistor characteristics as wells as CV measurements in order to verify the impacts of the different treatments on the electron concentration in the 2DEG. Furthermore, a TEM-EDX analysis was performed to find out if any fluorine incorporation in the AlGaN barrier during the CF4 plasma treatment occurs. No significant impact of the fluorine on the threshold voltage could be determined, We conclude that fluorine incorporation is not responsible for the threshold voltage shift.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Humboldt-Universität zu Berlin, Department of Physics, Chair of Crystallography, Newtonstr. 15, 12489 Berlin, Germany
Keywords:
AlGaN/GaN, CF4 plasma, high-electron mobility transistor, normally-off, fluorine, ED
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