R. Sohal^a, P. Dudek^b, O. Hilt^c

Published in:

Appl. Surf. Sci., vol. 256, no. 7, pp. 2210-2214 (2010).

Abstract:

A controlled AlGaN surface preparation method avails to improve the performance of GaN-based HEMT devices. A comparative investigation of chemical treatments by (1:10) NH₄OH:H₂O and (1:10) HCl:H₂O solutions for AlGaN surface preparation by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) is reported. The XPS data clearly reveal that the native oxide on AlGaN was composed of Al₂O₃, Ga₂O₃ and NO compounds. These compounds were etched off partially or completely by both the chemical treatments, namely NH₄OH or HCl solutions, independently. The HCl treatment etches out Al₂O₃ completely from native oxide unlike NH₄OH treatment. The HCl treatment results in larger amount of carbon segregation on AlGaN surfaces, however it removes all oxides´ compounds faster than NH₄OH treatment. The AFM results reveal the improvement of surface morphology by both the chemical treatments leading to the surface roughness RMS values of 0.24 nm and 0.21 nm for NH₄OH and HCl treated AlGaN layers, respectively.

Keywords:

HEMT, AlGaN/GaN heterostructure, Wet etching, NH₄OH, HCl, X-ray photoelectron spectroscopy, Atomic force microscopy

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