Orientation control of GaN {1122} and {1013} grown on (1010) sapphire by metal-organic vapor phase epitaxy
S. Ploch1, M. Frentrup1, T. Wernicke2 , M. Pristovsek1, M. Weyers2, M. Kneissl1,2
Published in:
J. Cryst. Growth, vol. 312, no. 15, pp. 2171-2174 (2010).
Abstract:
The growth of semipolar GaN on (100) (m-plane) sapphire was investigated by metal-organic vapor phase epitaxy (MOVPE). Most of the layers were polycrystalline with {1122}, {1013} and {1010} as the dominant surface orientations. For incomplete nitridation and recrystallization the {1013} orientation was dominant. However, the {1013} surface is rough due to twinned crystallites. Growth at lower temperatures and with reduced gas flow velocity results in predominantly {1122} oriented smooth layers. The orientation was also found to be influenced by the nitridation and recrystallization process.
1 Technische Universität Berlin,Institute of Solid State Physics, Hardenbergstrasse 36, D-10623 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
A1. MOVPE A2. Single crystal structure B1. GaN B1. Nitrides B1. Sapphire
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