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  4. Modeling GaN Power Transistors

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Modeling GaN Power Transistors

M. Rudolph1,2

Published in:

IEEE Annual Wireless and Microwave Technology Conf. (WAMICON 2010), Melbourne, FL, Apr. 12-13, pp. 1-4 (2010).

Abstract:

Modeling GaN transistors is still a matter of research. The technology is still quite young and not yet fully mature. A second issue is the fact that GaN transistors are commonly used as packaged power devices. This paper discusses modeling results obtained for different GaN devices from a small HEMT to a 60- W packaged power transistor. It is shown that the performance state-of-the art GaN HEMTs are no longer strongly impacted by dispersion effects. Therefore, the well-known HEMT models can be successfully used for these transistors. Beginning with this finding, the model extraction for the 60-W packaged device is discussed step-by-step.

1 Ulrich L. Rohde Chair of RF and Microwave Techniques, Siemens-Halske-Ring 14, 03046 Cottbus, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Index Terms:

MODFETs, power transistors, semiconductor device modeling, semiconductor device packaging

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