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1060-nm Multi Quantum Well Diode Lasers With Narrow Vertical Divergence Angle of 8° and High Internal Efficiency
/forschung/publikationen/1060-nm-multi-quantum-well-diode-lasers-with-narrow-vertical-divergence-angle-of-8-and-high-internal-efficiency
MQW 1060 nm structures with extremely thick 8.64µm waveguide resulting in 8° angle of vertical divergence have been grown and tested. The measurements of uncoated lasers promise high optical…
A Novel Self-Pinching Gate Biasing Scheme for Safe Operation and Characterization of GaN HEMTs
/forschung/publikationen/a-novel-self-pinching-gate-biasing-scheme-for-safe-operation-and-characterization-of-gan-hemts
This letter presents a novel gate bias configuration for GaN HEMTs that ensures a safe operation of this kind of device by protecting the gate from forward turn-on. The bias circuit includes a simple…
High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays
/forschung/publikationen/high-brightness-and-ultranarrow-beam-850-nm-gaasalgaas-photonic-band-crystal-lasers-and-single-mode-arrays
Lasers with a waveguide based on a longitudinal photonic band crystal designed for 850 nm emission are investigated. They demonstrate ultranarrow vertical beam divergence of about 7° full-width…
Experimental determination of the thermal lens parameters in a broad area semiconductor laser amplifier
/forschung/publikationen/experimental-determination-of-the-thermal-lens-parameters-in-a-broad-area-semiconductor-laser-amplifier
Due to the build-up of temperature gradients along their width, semiconductor laser diodes tend to be affected by thermal lensing effects. We propose a simple and easy-to-implement experiment in…
High-Power DBR-Tapered Laser at 980 nm for Single-Path Second Harmonic Generation
/forschung/publikationen/high-power-dbr-tapered-laser-at-980nbspnm-for-single-path-second-harmonic-generation
We present experimental results about edge-emitting distributed-Bragg-reflector-tapered diode lasers emitting at 980 nm. The investigated lasers show an output power of up to 12 W with a…
Design and Simulation of Next-Generation High-Power, High-Brightness Laser Diodes
/forschung/publikationen/design-and-simulation-of-next-generation-high-power-high-brightness-laser-diodes
High-brightness laser diode technology is progressing rapidly in response to competitive and evolving markets. The large volume resonators required for high-power, high-brightness operation makes…
High-Brightness Quantum Well Tapered Lasers
/forschung/publikationen/high-brightness-quantum-well-tapered-lasers
High-power quantum well lasers with high brightness in the spectral range between 650 nm and 1080 nm will be presented. Improved layer structures with a narrow vertical far-field divergence…
4.5 W Hybrid Integrated Master-Oscillator Power-Amplifier at 976 nm on Micro-Optical Bench
/forschung/publikationen/45nbspw-hybrid-integrated-master-oscillator-power-amplifier-at-976nbspnm-on-micro-optical-bench
Compact high power laser light sources emitting a single frequency with diffraction limited beams in continuouswave (CW) operation are required for many applications including frequency conversation.…
THz sources and detectors based on diode lasers
/forschung/publikationen/thz-sources-and-detectors-based-on-diode-lasers
We demonstrate concepts for compact and cost effective THz technology based on semiconductor diode lasers. In detail, we analyze diode laser based THz sources and detectors. Continuous wave THz…
High power DFB lasers for D1 and D2 rubidium absorption spectroscopy and atomic clocks
/forschung/publikationen/high-power-dfb-lasers-for-d1-and-d2-rubidium-absorption-spectroscopy-and-atomic-clocks
Distributed feedback ridge-waveguide lasers have been developed. The distributed feedback is provided by a second order grating, formed into an InGaP/GaAsP/InGaP multilayer structure. A threshold…