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Effect of the AIN nucleation layer growth on AlN material quality

O. Reentiläa, F. Brunnera, A. Knauera, A. Mogilatenkob, W. Neumannb, H. Protzmannc, M. Heukenc, M. Kneissla,d, M. Weyersa, G. Tränklea

Published in:

J. Cryst. Growth, vol. 310, no. 23, pp. 4932-4934 (2008).

Abstract:

AlN layers were grown by metalorganic vapor-phase epitaxy at high temperatures up to 1500°C. Nucleation layer growth parameters and flow conditions before nucleation were changed and the effect on the AlN layer grown on top was studied. Structural analysis performed by high-resolution X-ray diffractometry and transmission electron microscopy showed that pregrowth conditions affect the material quality drastically. The best structural quality as indicated by a screw (including mixed) dislocation density of 8x108 cm-2, together with smooth surface morphology was found to result from simultaneous switching on of ammonia and TMA lat the beginning of nucleation layer growth.

a Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
b Institute of Physics, Humboldt Universität zu Berlin, Newtonstr. 15, D-12489 Berlin, Germany
c AIXTRON AG, Kackertstr.15-17, D-52072 Aachen, Germany
d Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany

Keywords:

A1. High-resolution X-ray diffraction A3. Metalorganic vapor-phase epitaxy B1. Aluminum nitride B1. Nitrides

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