Current Trends and Challenges in III-V HBT Compact Modeling
Published in:
European Microwave Integrated Circuit Conf. (EuMIC 2008), Amsterdam, Netherlands, Oct. 27-28, pp. 278-281 (2008).
Abstract:
This paper gives an overview on recent achievements in the modeling of GaAs or InP based HBTs. The emphasis lies on the description of weakly nonlinear behavior, and on advanced descriptions for 1/f and shot noise for nonlinear simulation. Although compact HBT modeling already reached a high level of accuracy, certain limitations remain that will also be addressed.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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