In-situ etching of GaAs/AlxGa1-xAs by CBr4
A. Maaßdorf, M. Weyers
Published in:
J. Cryst. Growth, vol. 310, no. 23, pp. 4754-4756 (2008).
Abstract:
In-situ etching of GaAs and AlxGa1-xAs in LP-MOVPE has been studied using carbon tetrabromide (CBr4). This source is routinely used by us as a source for carbon doping in GaAs and AlGaAs. The etching rate decreases with increasing AsH3 partial pressure. While the etch rate is nearly constant for GaAs between 600 and 700°C it strongly drops towards higher temperatures with higher Al content in the layers. A model based on blocking of the surface by non-volatile Al-Br compounds is proposed. The observed effects allow for selective in-situ etching of GaAs against AlGaAs.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
A1.Etching A3. Metalorganic vapour phase epitaxy B1. Halides B2. Semiconducting aluminium compounds B2. Semiconducting gallium compounds
© 2008 Elsevier B.V. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Elsevier B.V.
Full version in pdf-format.