Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
Measurement and Simulation of Distributed-Feedback Tapered Master-Oscillator Power Amplifiers
/forschung/publikationen/measurement-and-simulation-of-distributed-feedback-tapered-master-oscillator-power-amplifiers
The spectral and spatial behavior of monolithically integrated distributed-feedback tapered master-oscillator power amplifiers emitting around 973 nm is experimentally and theoretically…
Experimental method for scanning the surface depletion region in nitride based heterostructures
/forschung/publikationen/experimental-method-for-scanning-the-surface-depletion-region-in-nitride-based-heterostructures
The group-III-nitride semiconductors feature strong spontaneous polarization in the [0001] direction and charges on the respective polar surfaces. Within the resulting surface depletion region the…
High-power 808 nm ridge-waveguide diode lasers with very small divergence, wavelength-stabilized by an external volume Bragg grating
/forschung/publikationen/high-power-808-nm-ridge-waveguide-diode-lasers-with-very-small-divergence-wavelength-stabilized-by-an-external-volume-bragg-grating
We present data on ridge-waveguide diode lasers having a vertical far-field divergence of only 11.5° (FWHM) owing to an appropriate waveguide design. The lasers emitted an optical power of more than…
Epitaxial lateral over growth on (2110) α-plane GaN with [0111]-oriented stripes
/forschung/publikationen/epitaxial-lateral-over-growth-on-2110-a-plane-gan-with-0111-oriented-stripes
Epitaxial lateral overgrowth was applied to α-plane GaN on r-plane sapphire using SiO2 stripe masks oriented parallel to [0111]. Coalescence and defect distribution was studied using scanning…
Trumpf entwickelt 1kW-Halbleiterlaser
/media-center/medienschau/trumpf-entwickelt-1kw-halbleiterlaser
Er besitzt eine Leistung von 1020 Watt bei einer Stromstärke von 1100 Ampère: Die Trumpf Laser GmbH, ansässig im Technologiepark Berlin Adlershof, hat den leistungsstärksten Laserbarren der…
Regionale Auftaktveranstaltung "Forschungsfabrik Mikroelektronik Deutschland"
/termine/regionale-auftaktveranstaltung-forschungsfabrik-mikroelektronik-deutschland
Auftaktveranstaltung der Berlin-Brandenburger Partnerinstitute der "Forschungsfabrik Mikroelektronik Deutschland" mit Frau Bundesministerin Johanna Wanka - mit Anmeldung.
Catastrophic optical mirror damage in diode lasers monitored during single-pulse operation
/forschung/publikationen/catastrophic-optical-mirror-damage-in-diode-lasers-monitored-during-single-pulse-operation
Catastrophic optical mirror damage (COMD) is analyzed for 808 nm emitting diode lasers in single-pulse operation in order to separate facet degradation from subsequent degradation processes.…
Strain engineering of AlGaN-GaN HFETs grown on 3 inch 4H-SiC
/forschung/publikationen/strain-engineering-of-algan-gan-hfets-grown-on-3-inch-4h-sic
In this work strain evolution during MOVPE of AlGaN/GaN HFET structures on 3 inch SiC substrates is investigated in-situ and related to properties of the initial AlN wetting layer. It is shown that…
Electroluminescence characterization of AlGaN/GaN HEMTs
/forschung/publikationen/electroluminescence-characterization-of-algangan-hemts
Microscopic electroluminescence (EL) measurements on Al- GaN/GaN high-electron-mobility transistors are reported. Photon emission is detected from front side and also from the backside of the wafer.…
Wide Temperature Range High Power Broad Area 975nm DFB Lasers
/forschung/publikationen/wide-temperature-range-high-power-broad-area-975nm-dfb-lasers
100µm stripe 975nm DFB lasers are shown to operate with spectral width <0.35nm to 100°C. Narrow (14°) vertical far field and reasonable conversion efficiency (39,5%) were achieved. A comparison…