400 mW and 16.5% wavelength conversion efficiency at 488 nm using a diode laser and a PPLN crystal in single pass configuration
M. Uebernickel, C. Fiebig, G. Blume, K. Paschke, B. Eppich, R. Güther, G. Erbert
Published in:
Appl. Phys. B, vol. 93, no. 4, pp. 823-827 (2008).
Abstract:
Continuous wave power of more than 400 mW at 488 nm has been generated by frequency doubling of 2.45W at 976 nm obtained from a distributed Bragg reflector tapered diode laser. This results in a wavelength conversion efficiency of 16.5% and an electrical-to-optical efficiency of more than 4.5%. We used a 50 mm long periodically poled MgO:LiNbO3 bulk crystal in single-pass configuration for the second harmonic generation. This is to the author’s knowledge the highest output power and the highest wavelength conversion efficiency at 488 nm generated by a monolithic semiconductor laser device in single pass configuration with a bulk crystal. A deviation from the quadratic dependency of the frequency doubling is explained by the decrease of the beam quality of the fundamental wave.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
PACS:
42.65.Ky; 42.55.Px; 42.60.Pk
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