Conductively Cooled 637-nm InGaP Broad-Area Lasers and Laser Bars With Conversion Efficiencies Up to 37% and a Small Vertical Far Field of 30°
C. Kaspari, B. Sumpf, M. Zorn, J. Fricke, P. Ressel, K. Paschke, M. Weyers, and G. Erbert
Published in:
IEEE Photonics Technol. Lett., vol. 20, no. 22, pp. 1824-1826 (2008).
Abstract:
Highly efficient operation of 637-nm broad-area (BA) laser diodes and laser bars with a small vertical far field of 30° (full-width at half-maximum) is reported. The laser structure consists of an InGaP quantum well embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers. Single BA emitters with a stripe width of 30 µm emitted a maximum continuouswave (CW) power of 540 mW at 15°C. Six-millimeter-wide laser bars with 12 30-µm-wide emitters (filling factor of 6%) reached CW power levels of 5.4 W at 15°C. The maximum conversion efficiency of single lasers and laser bars at 15°C was 37% and 31%, respectively.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Index Terms:
Conversion efficiency, continuous-wave (CW) lasers, red lasers, semiconductor lasers.
© Copyright 2008 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Full version in pdf-format.