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Current Trends and Challenges in III-V HBT Compact Modeling
/forschung/publikationen/current-trends-and-challenges-in-iii-v-hbt-compact-modeling
This paper gives an overview on recent achievements in the modeling of GaAs or InP based HBTs. The emphasis lies on the description of weakly nonlinear behavior, and on advanced descriptions for 1/f…
High-power single-frequency operation of a DBR tapered laser
/forschung/publikationen/high-power-single-frequency-operation-of-a-dbr-tapered-laser
A 980nm DBR tapered laser is presented which achieves 12W power in a single longitudinal mode and a nearly diffraction limited beam with a conversion efficiency of 44%. The device has a 6th-order…
High brightness and ultra-narrow beam 850 nm GaAs/AlGaAs photonic band crystal lasers and first uncoupled PBC single-mode arrays
/forschung/publikationen/high-brightness-and-ultra-narrow-beam-850nbspnm-gaasalgaas-photonic-band-crystal-lasers-and-first-uncoupled-pbc-single-mode-arrays
850 nm PBC broad area lasers demonstrate ultra-narrow vertical beam divergence of 7° and ultra-high brightness. First arrays of uncoupled single-mode PBC-lasers are demonstrated.
Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes
/forschung/publikationen/ultrahigh-brightness-850-nm-gaasalgaas-photonic-crystal-laser-diodes
One-dimensional photonic crystal lasers emitting in the 850 nm range show high internal quantum efficiencies of 93% and very narrow vertical beam divergence of 7.1° (full width at half maximum).…
Compact green laser source using butt-coupling between multi-section DFB-laser and SHG waveguide crystal
/forschung/publikationen/compact-green-laser-source-using-butt-coupling-between-multi-section-dfb-laser-and-shg-waveguide-crystal
A green laser source was assembled consisting of a multi-section distributed feedback laser and a periodically poled lithium niobate crystal in single-pass configuration. Butt-coupling between the…
Dynamic simulation of high brightness semiconductor lasers
/forschung/publikationen/dynamic-simulation-of-high-brightness-semiconductor-lasers
High-power tapered semiconductor lasers are characterized by a huge amount of structural and geometrical design parameters, and they are subject to time-space instabilities like pulsations,…
High power 404 nm source based on second harmonic generation in PPKTP of a tapered external feedback diode laser
/forschung/publikationen/high-power-404-nm-source-based-on-second-harmonic-generation-in-ppktp-of-a-tapered-external-feedback-diode-laser
We present results on a 404 nm laser system based on second harmonic generation in a new compact external cavity configuration. We obtain a stable 318 mW cw diffraction limited output from the system…
Pressure and temperature tuning of an external cavity InGaAsP laser diode
/forschung/publikationen/pressure-and-temperature-tuning-of-an-external-cavity-ingaasp-laser-diode
We demonstrate wide-range tuning of an 830 nm InGaAsP laser diode by pressure and temperature combined with tuning by external grating. Pressure tuning (up to 11 kbar) yields the wavelength range of…
Microstructure of a-plane (2110) GaN ELOG stripe patterns with different in-plane orientation
/forschung/publikationen/microstructure-of-a-plane-2110-gan-elog-stripe-patterns-with-different-in-plane-orientation
Nonpolar epitaxial lateral overgrown (ELOG) GaN ridges with different in-plane orientations were studied using cathodoluminescence (CL) and micro-Raman spectroscopy. The high density of threading…
Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering
/forschung/publikationen/anisotropic-strain-on-phonons-in-a-plane-gan-layers-studied-by-raman-scattering
The strain state of a-plane GaN layers grown on r-plane sapphire was studied by Raman spectroscopy. Some of the layers investigated have been uncoalesced stripe structures grown by epitaxial lateral…