Limitations of Current Compact Transit-Time Models for III-V-Based HBT
Published in:
IEEE MTT-S Int. Microw. Symp. Dig., Atlanta, GA, Jun. 15-20, pp. 487-490 (2008).
Abstract:
This paper investigates the accuracy limitations of common compact bipolar transistor models towards higher frequencies. The device under test is a InGaP/GaAs HBT, simulated by the FBH HBT model. The results, however, analogously hold for similar bipolar devices and models. The investigation is based on an analytical approach that explains how the model approximations impact simulation accuracy. A model extension is proposed that improves the model at higher frequencies. Measurements are compared with large-signal model simulations that prove the analytical reasoning and highlight the relevance of the effect under realistic operation conditions.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Index Terms:
Heterojunction bipolar transistor, semiconductor device modeling, equivalent circuit.
© Copyright 2008 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Full version in pdf-format.