High peak power femtosecond pulses from modelocked semiconductor laser in external cavity
T. Schlaucha, M. Lia, M.R. Hofmanna, A. Klehrb, G. Erbertb, and G. Tränkleb
Published in:
Electron. Lett., vol. 44, no. 11, pp. 678-679 (2008).
Abstract:
The generation of high peak power femtosecond pulses from an all semiconductor laser system is demonstrated. The system is based on a passively modelocked two-section laser diode in an external cavity, a tapered amplifier and a compact external pulse compressor. Pulse durations are achieved below 600 fs with an average optical power above 500 mW at a repetition rate of 330 MHz. This corresponds to a peak power of 2.5 kW, which is the highest value reported for an all semiconductor ultrafast laser system so far.
a Lehrstuhl für Photonik und THz-Technologie, Ruhr-Universität Bochum, Bochum D-44780, Germany
b Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
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