Bow-Tie-Antenna-Coupled Terahertz Detectors using AlGaN/GaN Field-Effect Transistors with 0.25 Micrometer Gate Length

M. Bauer1, A. Lisauskas1, S. Boppel1, M. Mundt1, V. Krozer1,2, H.G. Roskos1, S. Chevtchenko2, J. Würfl2, W. Heinrich2 and G. Tränkle2

Published in:

Proc. 8th European Microwave Integrated Circuits Conf. (EuMIC 2013), Nuremberg, Germany, Oct. 6-8, pp. 212-215 (2013).

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We report on the design and characterization of terahertz detection devices using field-effect transistors and on-chip broadband antennas. Experimental results from measurements on high-electron-mobility transistors fabricated with a AlGaN/GaN heterostructure are presented. Physical device parameters are extracted. The measured samples exhibit good noise-equivalent power (NEP) values at 0.6 THz of down to ∼ 125 pW/√Hz. The responsivity is maximized by gate width. The best NEP value is found for the narrowest devices.

1 Physikalisches Institut, Johann Wolfgang Goethe Universität, Frankfurt am Main, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany


AlGaN/GaN terahertz detectors; high-responsivity devices; antenna-coupled high-electron-mobility transistors; integrated field-effect transistors.