Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
Impact of vertical structure on thermal lensing and lateral beam quality in high-power broad-area diode lasers
/forschung/publikationen/impact-of-vertical-structure-on-thermal-lensing-and-lateral-beam-quality-in-high-power-broad-area-diode-lasers
Proper regulation of the lateral thermal profile (lens) in broad-area diode-lasers (BALs) is essential for improved beam quality. New finite-element thermal-simulation-based analysis of measured…
Optical Mode Calculation in Large-Area Photonic Crystal Surface-Emitting Lasers
/forschung/publikationen/optical-mode-calculation-in-large-area-photonic-crystal-surface-emitting-lasers
We discuss algorithms and numerical challenges in constructing and resolving spectral problems for photonic crystal surface-emitting lasers (PCSELs) with photonic crystal layers and large (up to…
High-efficiency and high-brightness broad area laser diodes with buried implantation current blocking
/forschung/publikationen/high-efficiency-and-high-brightness-broad-area-laser-diodes-with-buried-implantation-current-blocking
Buried-regrown-implant-structure (BRIS) technology combines two-step epitaxial regrowth with an intermediate ion implantation step in order to realise a buried current aperture close to the active…
UV LEDs go micro
/forschung/publikationen/uv-leds-go-micro
Shrinking UV LEDs to a micron or so delivers multiple benefits, including higher efficiencies and opportunities in new applications.
Vertical high-voltage GaN-based pn-diodes on foreign and native substrates – targeting next-generation power electronics
/forschung/forschungsnews/vertical-high-voltage-gan-based-pn-diodes-on-foreign-and-native-substrates-targeting-next-generation-power-electronics
Achieving high blocking strength and low on-state resistance simultaneously is essential for efficient power electronic converters. The relationship between blocking strength, thick epitaxial drift…
The Ferdinand-Braun-Institut in Berlin has developed a terahertz line scanner for plastic components.
/media-center/medienschau/the-ferdinand-braun-institut-in-berlin-has-developed-a-terahertz-line-scanner-for-plastic-components
The in-line terahertz scanner enables larger cost-effective scan line lengths in industrial environments. The sensors are based on FBH’s GaN-HEMT microwave process. In cooperation with the…
First line scanner with monolithic THz detectors
/media-center/medienschau/first-line-scanner-with-monolithic-thz-detectors
Terahertz radiation is routinely used at airports for security checks because it penetrates clothing, organic tissue, and many other materials including plastics, polymers, and ceramics. In industry,…
LayTec’s 29th in-situ seminar
/termine/laytecs-29th-in-situ-seminar
in Verbindung mit der ICMOVPE XXI Zu den Referenten gehören: Stefano Leone, Fraunhofer Institute for Applied Solid State Physics IAF André Maaßdorf, Ferdinand-Braun-Institut Johannes Zettler,…
ICMOVPE XXI
/termine/icmovpe-xxi
Das FBH beteiligt sich an der 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI) mit einem Beitrag.
Girls'Day - Ein Tag als Mikrotechnologin
/termine/girlsday
Mikrochips machen uns das Leben leichter. Und dabei merken wir das meistens gar nicht. Sie stecken in jedem Mobiltelefon, in der Supermarktkasse oder helfen beim Einparken. Neugierig geworden?