Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm
M. Chi1, G. Erbert2, B. Sumpf2, and P.M. Petersen1
Published in:
Opt. Lett., vol. 35, no. 10, pp. 1545-1547 (2010).
Abstract:
A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than 0.07 nm throughout the tuning range, and the beam quality factor M2 is 2.0 with the output power of 1.27 W.
1 DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, Frederiksborgvej 399, P.O. Box 49, DK-4000 Roskilde, Denmark
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
OCIS codes:
140.0140, 140.5960, 140.2020, 140.3280.
© 2010 Optical Society of America. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Optical Society of America.
Full version in pdf-format.