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Tapered Diode Laser With Reverse Bias Absorber Section

C. Fiebig, D. Feise, B. Eppich, K. Paschke, G. Erbert

Published in:

IEEE Photonics Technol. Lett., vol. 21, no. 23, pp. 1755-1757 (2009).

Abstract:

We present experimental results about gain-guided tapered diode laser having reverse bias absorber sections beside the ridge-waveguide. Due to these sections, we can avoid the propagation of unwanted modes outside the cavity. Therefore, the beam quality factor at about 6.5 W can be reduced from M2σ= 8 down to M2σ= 5. Furthermore, the laser shows a more stable spectral behavior at high output power levels.

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany

Index Terms:

Absorber, beam quality, tapered diode laser.

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