1060-nm Multi Quantum Well Diode Lasers With Narrow Vertical Divergence Angle of 8° and High Internal Efficiency
A. Pietrzak, P. Crump, F. Bugge, H. Wenzel, G. Erbert and G. Tränkle
Published in:
Conf. on Lasers and Electro-Optics/International Quantum Electronics Conf. (CLEO/IQEC), Baltimore, MD, Jun. 1-6, paper CWF2 (2009).
Abstract:
MQW 1060 nm structures with extremely thick 8.64µm waveguide resulting in 8° angle of vertical divergence have been grown and tested. The measurements of uncoated lasers promise high optical power operation with nearly circular beam-shape.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
OCIS Codes:
(140.5960) Semiconductor lasers; (250.5590) Quantum-well, -wire and -dot devices
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