Electroluminescence characterization of AlGaN/GaN HEMTs
R. Lossy1, A. Glowacki2, C. Boit2, and J. Würfl1
Published in:
phys. stat. sol. (c), vol. 6, no. 6, pp. 1382-1385 (2009).
Abstract:
Microscopic electroluminescence (EL) measurements on Al- GaN/GaN high-electron-mobility transistors are reported. Photon emission is detected from front side and also from the backside of the wafer. Using both detection geometries manufacturing related dependencies can beidentified. Investigation of EL from backside during pinch-off operation reveals detailed emission pattern that are partially hidden during front side observation. Spectrally resolved photon emission shows different pattern for on-state and off-state condition.
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Technische Universität Berlin, E2, Einsteinufer 19, 10587 Berlin, Germany
PACS:
78.60.Fi, 85.30.Tv, 85.35.Be
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