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Publikationen
/forschung/publikationen/characterization-of-decomposition-in-gax-in1-x-asy-p1-y-layers-by-z-contrast-imaging-eels-and-cbed
Publikationen
/forschung/publikationen/orientation-dependent-indium-incorporation-in-movpe-grown-ingaasgaas-quantum-wells
Polarization dynamics of strained 1.3µm InGaAsP-InP lasers: spectral properties and lateral near-field behaviour
/forschung/publikationen/polarization-dynamics-of-strained-13um-ingaasp-inp-lasers-spectral-properties-and-lateral-near-field-behaviour
Emission from a tensile-strained ridge-waveguide InGaAsP–InP laser, which exhibits a transition between TE and TM polarization when the DC injection current exceeds a certain value, was investigated…
Oxidation and reduction kinetics of eutectic SnPb, InSn, and AuSn: a knowledge base for fluxless solder bonding applications
/forschung/publikationen/oxidation-and-reduction-kinetics-of-eutectic-snpb-insn-and-ausn-a-knowledge-base-for-fluxless-solder-bonding-applications
For microelectronics and especially for upcoming new packaging technologies in micromechanics and photonics fluxless, reliable and economic soldering technologies are needed. In this article, we…
Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability
/forschung/publikationen/non-radiative-current-in-ingaasalgaas-laser-diodes-as-a-measure-of-facet-stability
We present a novel, non-destructive optoelectronic technique to study passivation and degradation mechanisms at diode laser facets. We extract the non-radiative current components, Inr, from the…
Coplanar Passive Elements on Si Substrate for Frequencies up to 110 GHz
/forschung/publikationen/coplanar-passive-elements-on-si-substrate-for-frequencies-up-to-110-ghz
This paper provides both modeling and design information on coplanar passive elements on silicon substrate. The influence of substrate resistivity on coplanar waveguide (CPW) loss is discussed, and…
Real-time growth monitoring of InGaAs/InP-HBT structures with reflectance anisotropy spectroscopy
/forschung/publikationen/real-time-growth-monitoring-of-ingaasinp-hbt-structures-with-reflectance-anisotropy-spectroscopy
Reflectance anisotropy spectroscopy (RAS) was used for in-situ monitoring of MOVPE growth of InGaAs/InP-heterojunction bipolar transistors (HBT). Spectra were recorded during growth of differently…
X-ray study of lateral strain and composition modulation in an AlGaAs overlayer induced by a GaAs lateral surface grating
/forschung/publikationen/x-ray-study-of-lateral-strain-and-composition-modulation-in-an-algaas-overlayer-induced-by-a-gaas-lateral-surface-grating
A lateral surface grating has been prepared by holographic photolithography followed by wet chemical etching on a slightly misaligned GaAs [001] substrate. The structural parameters were investigated…