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Short-range order controlled amphoteric behavior of the Si dopant in Al-rich AlGaN
/forschung/publikationen/short-range-order-controlled-amphoteric-behavior-of-the-si-dopant-in-al-rich-algan
AlGaN alloys with high Al content offer the possibility to create deep ultraviolet light sources emitting at wavelengths ≤ 240 nm with enhanced quantum efficiency. However, increasing the…
Stress and Crystal Quality Analysis of GaN Layers on Cost-Effective Substrates for Vertical High- Power Applications
/forschung/publikationen/stress-and-crystal-quality-analysis-of-gan-layers-on-cost-effective-substrates-for-vertical-high-power-applications
For vertical transistor technology in the highpower regime, Gallium Nitride (GaN) layers grown on foreign substrates provide a cost-effective alternative to native GaN substrates but face challenges…
Digitally Reconfigurable Power Detector
/forschung/publikationen/digitally-reconfigurable-power-detector
This paper presents a reconfigurable diode detector operating at 24 GHz, capable of dynamically adjusting its output voltage and linear range through digital control of the load impedance. The…
Method of Estimating RF Probe-Tip Calibration Reproducibility Budget on Commercial Calibration Substrates
/forschung/publikationen/method-of-estimating-rf-probe-tip-calibration-reproducibility-budget-on-commercial-calibration-substrates
The paper presents a method for estimating the reproducibility budget for RF probe-tip calibration on commercial calibration substrates, a critical factor for achieving reliable wafer-level…
Array-Fed RIS: Validation of Friis-Based Modeling Using Full-Wave Simulations
/forschung/publikationen/array-fed-ris-validation-of-friis-based-modeling-using-full-wave-simulations
Space-fed large antenna arrays offer superior efficiency, simplicity, and reductions in size, weight, power, and cost (SWaP-C) compared to constrained-feed systems. Historically, horn antennas have…
Determining GaN HEMT Trap Models from MHz Load-line Measurement — Synthesis and Evaluation
/forschung/publikationen/determining-gan-hemt-trap-models-from-mhz-load-line-measurement-synthesis-and-evaluation
The modeling of GaN HEMTs is closely associated with pulsed measurements, which are essential for extracting model parameters related to trapping and thermal effects. However, these characterizations…
Monolithically integrated W-band detector with adjustable sensitivity
/forschung/publikationen/monolithically-integrated-w-band-detector-with-adjustable-sensitivity
In this paper, we present for the first time the design and measurement of our monolithically integratedW-band detector. We show that two mechanisms, the detector operating point and the variation of…
InP-HBT MMIC for RF Applications: Technology Roadmap and Heterointegration
/forschung/publikationen/inp-hbt-mmic-for-rf-applications-technology-roadmap-and-heterointegration
InP-HBT monolithic microwave integrated circuits offer a tailored solution for radio frequency applications in the W- , D-band and beyond. The capabilities can be expanded further through…
60 GHz Radio Transceiver System for Energy Efficient Communication Systems
/forschung/publikationen/60-ghz-radio-transceiver-system-for-energy-efficient-communication-systems
Wireless transmission infrastructure for high data rates requires broadband radio links at millimeter-wave frequencies. To aggregate high data throughput, signals from several modems in the…
Impact of Dielectric Insulation and Protection Layers on 233 nm Far-UVC LEDs
/forschung/publikationen/impact-of-dielectric-insulation-and-protection-layers-on-233-nm-far-uvc-leds
This letter investigates the effect of dielectric insulation or protection layers such as SiO2 and SiNx on the performance and reliability of 233 nm far-UVC LEDs. The study includes the effect of…