Publikationen

D. Vitali, A. Chillico, W. Samek, and O. Bengtsson

Improved On-Wafer Probing of High-Frequency Components Based on Optical Recognition of the Probe Positions

IEEE Trans. Microwave Theory Tech., early access, doi:10.1109/TMTT.2025.3557081 (2025).

N. Goossen-Schmidt, B. Arar, J. Fricke, K. Häusler, A. Maaßdorf, M. Schiemangk, S. Szermer, H. Wenzel, and A. Wicht

DBR Lasers at 679.29 and 707.20 nm for Efficient Repumping in Sr Optical Lattice Clocks

IEEE Photonics Technol. Lett., vol. 37, no. 20, pp. 1205-1208, doi:10.1109/LPT.2025.3591153 (2025).

A. Koyucuoglu, I. Ostermay, O. Krüger

Stress modulation in silicon nitride layers grown by plasma-enhanced chemical vapor deposition

Thin Solid Films, vol. 825, art. 140729, doi:10.1016/j.tsf.2025.140729 (2025).

M. Fregolent, M. Tomasi, C. De Santi, M. Buffolo, L. Tadmor, E. Brusaterra, E. Bahat Treidel, A. Cester, G. Meneghesso, E. Zanoni, M. Meneghini

Systematic analysis of the trapping and reliability of Al₂O₃/GaN MOS capacitors with different atomic layer deposition techniques

Mater. Sci. Semicond. Process., vol. 195, art. 109619, doi:10.1016/j.mssp.2025.109619 (2025).

H.K. Cho, J. Rass, J. Ruschel, I. Ostermay, A. Koyucuoglu, J.E. Boschker, T. Kolbe, and S. Einfeldt

Impact of Dielectric Insulation and Protection Layers on 233 nm Far-UVC LEDs

IEEE Photonics Technol. Lett., vol. 37, no. 15, pp. 829-832 (2025).

L.-M. Kern, V.M. Kuchkin, V. Deinhart, C. Klose, T. Sidiropoulos, M. Auer, S. Gaebel, K. Gerlinger, R. Battistelli, S. Wittrock, T. Karaman, M. Schneider, C.M. Günther, D. Engel, I. Will, S. Wintz, M. Weigand, F. Büttner, K. Höflich, S. Eisebitt, and B. Pfau

Controlled Formation of Skyrmion Bags

Adv. Mater., vol. 37, no. 29, pp. 2501250, doi:10.1002/adma.202501250 (2025).

E. Torres, J. Ciers, N. Rebelo, F. Hjort, M.A. Bergmann, S. Graupeter, J. Enslin, G. Cardinalli, T. Wernicke, M. Kneissl, and Å. Haglund

Ultraviolet-C Vertical-Cavity Surface-Emitting Lasers with Precise Cavity Length Control

Laser Photonics Rev., vol. 18, no. 13, pp. 2402203, doi:10.1002/lpor.202402203 (2025).

J. Ortiga-Fibla, F. Brunner, E. Bahat Treidel, O. Hilt, E. Brusaterra, and A. Cros

Phonon–plasmon coupled modes in GaN vertical power structures: Carrier concentration and mobility analysis

J. Appl. Phys., vol. 138, no. 4, pp. 045703, doi:10.1063/5.0274584 (2025).

S. Wohlfeil, J.-P. Koester, H. Christopher, J. Fricke, P. Della Casa, H. Wenzel, A. Knigge, G. Tränkle

Repetition Frequency Detuning in Mode-Locked Lasers with Integrated S-Bend Waveguide

Electron. Lett., vol. 61, no. 1, art. e70266, doi:10.1049/ell2.70266 (2025).

A. Jalehdoost, K. Sowoidnich, A. Müller, D. Feise, K. Paschke, B. Sumpf, M. Maiwald

Monolithic Y-branch distributed Bragg reflector diode laser at 633 nm for shifted excitation Raman difference spectroscopy

Appl. Phys. B, vol. 131, art. 154, doi:10.1007/s00340-025-08520-0 (2025).

K. Sowoidnich, S. Pätzold, M. Ostermann, B. Sumpf and M. Maiwald

Qualitative and quantitative soil characterization on an agricultural field using a portable shifted excitation Raman difference spectroscopy instrument

Analyst, vol. 150, no. 13, pp. 2934-2944, doi:10.1039/D5AN00178A (2025).

L. Smeesters, F. Venturini, S. Paulus, A.-K. Mahlein, D. Perpetuini, ... K. Sowoidnich et.al.

2025 photonics for agrifood roadmap: towards a sustainable and healthier planet

J. Phys. Photonics, vol. 7, no. 3, pp. 032501, doi:10.1088/2515-7647/adbea9 (2025).

P. Paul, E. Brusaterra, I. Ostermay, E. Bahat Treidel, F. Brunner, A. Mogilatenko, K. Udas, J. Boschker, O. Hilt, and O. Krüger

Plasma enhanced atomic layer deposition of HfO₂—A potential gate dielectric for GaN-based devices

J. Vac. Sci. Technol. A, vol. 43, no. 4, pp. 042406, doi:10.1116/6.0004564 (2025).

N. Ammouri, H. Christopher, A. Maaßdorf, J. Fricke, A. Ginolas, A. Liero, H. Wenzel, A. Knigge and G. Tränkle

420 W pulse power from a 905 nm distributed bragg reflector laser with multiple active regions and tunnel junctions

Phys. Scr., vol. 100, no. 7, pp. 075514, doi:10.1088/1402-4896/adde8e (2025).

E. Brusaterra, E. Bahat Treidel, P. Paul, I. Ostermay, F. Brunner, and O. Hilt

Vertical GaN Trench MOSFETs with HfO₂ / Al₂O₃ Layered Gate Dielectric

International Conference on Compound Semiconductor Manufacturing Technology (CS ManTech 2025), New Orleans, USA, May 19-22, paper 2A.2 (2025).

E. Bahat Treidel, E. Brusaterra, L. Deriks, S. Danylyuk, E. Brandl, J. Bravin, F. Brunner and O. Hilt

Vertical GaN-on-Tungsten High Voltage pn-Diodes

International Conference on Compound Semiconductor Manufacturing Technology (CS ManTech 2025), New Orleans, USA, May 19-22, paper 3A.3 (2025).

S. Kanthak, J. Pahl, D. Reiche, and M. Krutzik

Proposal for a Bose–Einstein Condensate Based Test of Born’s Rule Using Light–Pulse Atom Interferometry

Adv. Quantum Technol., vol. 8, no. 6, pp. 2400436, doi:10.1002/qute.202400436 (2025).

M. Mengozzi, A.M. Angelotti, G.P. Gibiino, C. Schulze, C. Florian, P. Colantonio, O. Bengtsson, and A. Santarelli

Enhancing K-Band Dual-Input Doherty PA Performance by Bayesian Optimization

IEEE Trans. Microwave Theory Tech., vol. 73, no. 6, pp. 3491-3502, doi:10.1109/TMTT.2024.3498451 (2025).

C. Mourikis, G. Blume, K. Paschke, and G. Tränkle

Laser emission at 253.7 nm using a LaBGeO₅ and a Mg:LiTaO₃ crystal seeded by a 761.1 nm diode laser module

Appl. Opt., vol. 64, no. 18, pp. 4969-4974 (2025).

C. Garcion, S.S. Gill, M. Misslisch, A. Heidt, I. Papadakis, B. Piest, V. Schkolnik, T. Wendrich, A. Prat, K. Bleeke, H. Müntinga, M. Krutzik, S.-W. Chiow, N. Yu, C. Lotz, N. Gaaloul and E.M. Rasel

Dark energy search by atom interferometry in the Einstein-elevator

EPJ Quantum Technol., vol. 12, art. 65, doi:10.1140/epjqt/s40507-025-00371-0 (2025).

I. Prozheev, R. Bès, I. Makkonen, F. Mehnke, M. Schilling, T. Wernicke, M. Kneissl & F. Tuomisto

Short-range order controlled amphoteric behavior of the Si dopant in Al-rich AlGaN

Nat. Commun., vol. 16, art. 5005, doi:10.1038/s41467-025-60312-4 (2025).

C. Schulze, W. Heinrich, O. Bengtsson

Fast Optimization of RF Power Transistors with mmWave Active Load-Pull Techniques

International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC 2025), Torino, Italy, Apr. 10-11, ISBN 979-8-3315-1960-5 (2025).

A. Chillico, D. Vitali, W. Samek, O. Bengtsson

Automated On-Wafer Radio-Frequency Transistor Characterization with Adaptive Probing and Features Extraction with Uncertainties

International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC 2025), Torino, Italy, Apr. 10-11, ISBN 979-8-3315-1960-5 (2025).

V. Leitgeb, B. Kosednar-Legenstein, L. Mitterhuber, F. Brunner, E. Bahat-Treidel, E. Kraker

Stress and Crystal Quality Analysis of GaN Layers on Cost-Effective Substrates for Vertical High- Power Applications

26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE 2025), Utrecht, Netherlands, Apr. 6-9, ISBN 979-8-3503-9300-2 (2025).

D.G. Hellmich, S. Nozinic, E. Dischke, D. Sun, A. Rämer, W. Heinrich, V. Krozer

60 GHz Radio Transceiver System for Energy Efficient Communication Systems

16th German Microwave Conference (GeMiC 2025), Dresden, Germany, Mar. 17-19, ISBN 978-3-9820397-4-9, pp. 72-75 (2025).

H. Yacoub, C. Mangiavillano, M. Rausch, E. Dischke, W. Heinrich, P. Scheele

InP-HBT MMIC for RF Applications: Technology Roadmap and Heterointegration

16th German Microwave Conference (GeMiC 2025), Dresden, Germany, Mar. 17-19, ISBN 978-3-9820397-4-9, pp. 366-367 (2025).

A. Rämer, E. Negri, E. Dischke, S. Chevtchenko, H. Yazdani, V. Krozer, W. Heinrich

Monolithically integrated W-band detector with adjustable sensitivity

16th German Microwave Conference (GeMiC 2025), Dresden, Germany, Mar. 17-19, ISBN 978-3-9820397-4-9, pp. 431-434 (2025).

P. Manchanda, M. Knaack, F. Tost, C. Andrei, M. Rudolph

Digitally Reconfigurable Power Detector

16th German Microwave Conference (GeMiC 2025), Dresden, Germany, Mar. 17-19, ISBN 978-3-9820397-4-9, pp. 439-442 (2025).

P. Beleniotis, C. Andrei, U.L. Rohde, M. Rudolph

Determining GaN HEMT Trap Models from MHz Load-line Measurement — Synthesis and Evaluation

16th German Microwave Conference (GeMiC 2025), Dresden, Germany, Mar. 17-19, ISBN 978-3-9820397-4-9, pp. 451-454 (2025).

K.K. Tiwari, T. Flisgen, W. Heinrich, G. Caire

Array-Fed RIS: Validation of Friis-Based Modeling Using Full-Wave Simulations

16th German Microwave Conference (GeMiC 2025), Dresden, Germany, Mar. 17-19, ISBN 978-3-9820397-4-9, pp. 611-614 (2025).

A. Rumiantsev, R. Doerner

Method of Estimating RF Probe-Tip Calibration Reproducibility Budget on Commercial Calibration Substrates

104th ARFTG Microwave Measurement Conference (ARFTG 2025), San Juan, USA, Jan. 19-22, ISBN 979-8-3503-6838-3 (2025).

F.A. Mubarak, G.N. Phung, U. Arz, K. Haddadi, I. Roch-Jeune, G. Ducournau, T. Flisgen, R. Doerner, D. Allal, D. Jayasankar, J. Stake, R. Schmidt, G. Fisher, N.M. Ridler, and X. Shang

An Interlaboratory Comparison of On-Wafer S-Parameter Measurements up to 1.1 THz

IEEE Trans. Terahertz Sci. Technol., vol. 15, no. 3, pp. 344-358, doi:10.1109/TTHZ.2025.3537461 (2025).

Md. J. Miah, A. Boni, D. Martin, A. Ginolas, M. Elattar, P. Della Casa, S. Grützner, S. Strohmaier, A. Knigge, G. Tränkle, and P. Crump

Thermal Lens Manipulation Using Edge-Heaters in Laser Bars for Improved Efficiency and Divergence

IEEE Photonics Technol. Lett., vol. 37, no. 9, pp. 545-548 (2025).

T. Tenzler, J.-P. Koester and H. Wenzel

Theoretical study of Bragg reflection waveguide laser structures with surface gratings for spontaneous parametric down conversion

Phys. Scr., vol. 100, no. 5, pp. 055105, doi:10.1088/1402-4896/adc347 (2025).

N. Roccato, F. Piva, M. Buffolo, C. De Santi, N. Trivellin, M. Schilling, A. Muhin, J. Höpfner, M. Guttmann, T. Wernicke, M. Kneissl, G. Meneghesso, E. Zanoni & M. Meneghini

Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs

Sci. Rep., vol. 15, art. 13483, doi:10.1038/s41598-025-95015-9 (2025).

M. Schilling, C. Hartmann, M. Guttmann, U. Juda, A. Muhin, J. Höpfner, T. Wernicke, T. Straubinger, and M. Kneissl

Light Extraction and External Quantum Efficiency of 235 nm Far–Ultraviolet-C Light-Emitting Diodes on Single-Crystal AlN Substrates

phys. stat. sol. (a), vol. 222, no. 8, pp. 2400812, doi:10.1002/pssa.202400812 (2025).

H. Yazdani, C. Zervos, P. Beleniotis, E. Brusaterra, O. Hilt, M. Rudolph, and J. Würfl

Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps-Induced Drain Lag

phys. stat. sol. (a), vol. 222, no. 8, pp. 2300885, doi:10.1002/pssa.202300885 (2025).

H.-E. Porteanu, I. Stefanović, M. Klute, P. Awakowicz, R.-P. Brinkmann, and W. Heinrich

Time-Resolved Investigations of the Capacitive to Inductive Transition in a Microwave-Driven Plasma Source

IEEE Trans. Plasma Sci., vol. 53, no. 4, pp. 571-578 (2025).

M.R. Mahani, I.A. Nechepurenko, T. Flisgen, A. Wicht

Combining Bayesian Optimization, Singular Value Decomposition, and Machine Learning for Advanced Optical Design

ACS Photonics, vol. 12, no. 4, pp. 1812–1821, doi:10.1021/acsphotonics.4c02157 (2025).

A. Abdalla, M. Abe, S. Abend, M. Abidi, M. Aidelsburger, ..., M. Krutzik, ..., M. Zarei, M. Zhan, S. Zhang, L. Zhou and E. Zupanič

Terrestrial Very-Long-Baseline Atom Interferometry: summary of the second workshop

EPJ Quantum Technol., vol. 12, art. 42, doi:10.1140/epjqt/s40507-025-00344-3 (2025).

E. Brusaterra, E. Bahat Treidel, L. Deriks, S. Danylyuk, E. Brandl, J. Bravin, M. Pawlak, A. Külberg, M. Schiersch, A. Thies, and O. Hilt

Vertical GaN-on-Tungsten High Voltage pn-Diodes From Sapphire-Grown GaN Membranes

IEEE Electron Device Lett., vol. 46, no. 4, pp. 564-567 (2025).

M. Schilling, J. Ruschel, H.K. Cho, J. Rass, J. Höpfner, T. Wernicke, S. Einfeldt and M. Kneissl

Effect of quantum well number on the efficiency and degradation of AlGaN-based far-UVC LEDs emitting at 233 nm and 226 nm

Semicond. Sci. Technol., vol. 40, no. 4, pp. 045004, doi:10.1088/1361-6641/adbf40 (2025).

H.-E. Porteanu, I. Stefanović, M. Klute, P. Awakowicz, R.P. Brinkmann and W. Heinrich

Time-resolved measurements of the E–H transition in a microwave driven ICP source

J. Phys. D: Appl. Phys., vol. 58, no. 15, pp. 155206, doi:10.1088/1361-6463/adb9fc (2025).

J.E. Boschker, D. Feise, U. Spengler, P. Ressel, K. Paschke, and A. Knigge

Influence of the Passivation Method on the Performance of 635 nm Ridge Waveguide Lasers

IEEE Photonics J., vol. 17, no. 2, art. 1500904, doi:10.1109/JPHOT.2025.3542598 (2025).

X. Geng, M. Wolf, C. Kuring, N. Wieczorek, O. Hilt, and S. Dieckerhoff

Characteristics and Operation of a Monolithic Bidirectional GaN-on-AlN/SiC Power Transistor Employing Dual-Gate

IEEE Trans. Power Electron., vol. 40, no. 4, pp. 5231-5240 (2025).

M.R. Mahani, I.A. Nechepurenko, Y. Rahimof, and A. Wicht

Frequency shift detection mechanism in GaAs waveguides with mode-coupled Bragg gratings

Opt. Express, vol. 33, no. 6, pp. 13519-13529, doi:10.1364/OE.557803 (2025).

K. Sowoidnich, A. Müller, K. Rudisch, K. Pufahl, V. Regir, B. Sumpf, M. Maiwald

Shifted excitation Raman difference spectroscopy: a potential tool for a sustainable recycling industry

Proc. of SPIE, vol. 13337, Plasmonics in Biology and Medicine XXII, Photonics West, San Francisco, USA, Jan 17-22, 1333705 (2025).

P. Crump and W.E. Fenwick

Performance scaling of high-power diode laser pumps for fusion applications

Proc. of SPIE, vol. 13343, High Power Lasers for Fusion Research VIII, Photonics West, San Francisco, USA, Jan 17-22, 133430C (2025).

F. Mauerhoff, O. Senel, D. Feise, A. Sahm, T. Schröder, K. Paschke

Miniaturized wavelength stabilized laser module emitting at 619nm

Proc. of SPIE, vol. 13344, Components and Packaging for Laser Systems XI, Photonics West, San Francisco, USA, Jan 17-22, 133440I (2025).

N. Werner, S.-A. Seeger, F. Mauerhoff, P. Hildenstein, A. Maaßdorf, G. Blume, D. Feise, A. Sahm, J. Zender, L. Wittenbecher, H. Wenzel, K. Paschke

High-power semiconductor laser systems at 720nm: tailored laser light delivery for quantum technologies

Proc. of SPIE, vol. 13345, High-Power Diode Laser Technology XXIII, Photonics West, San Francisco, USA, Jan 17-22, 1334505 (2025).

M. Elattar, H. Wenzel, J. Fricke, P. Della Casa, S. Kreutzmann, A. Knigge, A. Pietrzak, C.-L. Jiang, X. Liu, A. Amtout, S.D. McDougall, and P. Crump

Monolithic DBR broad-area diode lasers with high conversion efficiency in the 87x–88xnm wavelength range

Proc. of SPIE, vol. 13345, High-Power Diode Laser Technology XXIII, Photonics West, San Francisco, USA, Jan 17-22, 1334507 (2025).

M. Hübner, S. Arslan, L. Wittenbecher, J. Zender, B. Eppich, D. Martin, P. Della Casa, A. Ginolas, P.S. Basler, N. Lobo-Ploch, P. Crump, M. Rozycki, A. Schultze, U. Tradowsky, A. Knaub, H. Alder

Compact 1 kW diode laser process head emitting at 780 nm for the efficient direct additive manufacturing of aluminum

Proc. of SPIE, vol. 13345, High-Power Diode Laser Technology XXIII, Photonics West, San Francisco, USA, Jan 17-22, 133450U (2025).

M. Maiwald, K. Sowoidnich, A. Müller, B. Sumpf

Shifted Excitation Raman Difference Spectroscopy for the Analysis of Milk and Dairy Products

Proc. of SPIE, vol. 13357, Photonic Technologies in Plant and Agricultural Science II, Photonics West, San Francisco, USA, Jan 17-22, 1335704 (2025).

M. Buffolo, F. Piva, N. Roccato, C. De Santi, T. Wernicke, J. Höpfner, M. Schilling, A. Muhin, N. Susilo, D. Hauer-Vidal, L. Sulmoni, M. Kneissl, N. Trivellin, G. Meneghesso, E. Zanoni, M. Meneghini

Defects and reliability of UVC-LEDs

Proc. of SPIE, vol. 13366, Gallium Nitride Materials and Devices XX, Photonics West, San Francisco, USA, Jan 17-22, 133660G (2025).

A. Müller, R. Busch, K. Sowoidnich, L.S. Theurer, J.-P. Koester, M. Maiwald, A. Knigge, B. Sumpf

830 nm multimode interference coupler-based dual-wavelength master oscillator power amplifier for spectroscopic applications

Proc. of SPIE, vol. 13385, Novel In-Plane Semiconductor Lasers XXIV, Photonics West, San Francisco, USA, Jan 17-22, 133850A (2025).

L.S. Theurer, J.-P. Koester, A. Müller, M. Maiwald, A. Knigge, B. Sumpf, G. Tränkle

Quantification of losses in bent waveguide distributed Bragg reflector diode lasers at 785 nm

Proc. of SPIE, vol. 13385, Novel In-Plane Semiconductor Lasers XXIV, Photonics West, San Francisco, USA, Jan 17-22, 133850C (2025).

K. Paschke, N. Werner, S.-A. Seeger, D. Feise, P. Della Casa, R.-St. Unger, S. Kreutzmann, A. Sahm, G. Blume

Wavelength tunable tapered diode lasers at 1180 nm with high spectral radiance

Proc. of SPIE, vol. 13385, Novel In-Plane Semiconductor Lasers XXIV, San Francisco, USA, Jan 17-22, 133850G (2025).

B. King, H. Wenzel, E. Kuhn, M. Radziunas, and P. Crump

Design study on large-area all-semiconductor PCSELs

Proc. of SPIE, vol. 13385, Novel In-Plane Semiconductor Lasers XXIV, Photonics West, San Francisco, USA, Jan 17-22, 133850I (2025).

P. Crump, A. Boni, M. Elattar, S. Khamari, I.P. Marko, S.J. Sweeney, S. Arslan, B. King, M.J. Miah, D. Martin, A. Knigge, P. Della Casa, G. Tränkle

Experimental studies of GaAs-based broad area diode lasers using highly asymmetric epitaxial structures with high modal gain: finding a path to exceeding 80% conversion efficiency at 25°C

Proc. of SPIE, vol. PC13385, Novel In-Plane Semiconductor Lasers XXIV, Photonics West, San Francisco, USA, Jan 17-22, PC133850V (2025).

C. De Santi, F. Piva, M. Buffolo, N. Roccato, M. Pilati, S. Longato, N. Susilo, D. Hauer Vidal, A. Muhin, L. Sulmoni, T. Wernicke, M. Kneissl, N. Trivellin, G. Meneghesso, E. Zanoni, M. Meneghini

Spectral components, initial improvement and degradation of 265 nm UV-C LEDs

Proc. of SPIE, vol. 13386, Light-Emitting Devices, Materials, and Applications XXIX, Photonics West, San Francisco, USA, Jan 17-22, 1338608 (2025).

J. Hamperl, M. Gärtner, N. Goossen-Schmidt, B. Arar, M. Bursy, S. Hariharan, S. Kubitza, A. Liero, S. Nozinic, M. Schiemangk, S. Szermer, C. Tyborski, and A. Wicht

Micro-integrated laser distribution modules for low-SWaP optical atomic clocks

Proc. of SPIE, vol. 13392, Quantum Sensing, Imaging, and Precision Metrology III, Photonics West, San Francisco, USA, Jan 17-22, 133920E (2025).

G. Blume, D. Feise, A. Sahm, P. Hildenstein, N. Werner, J. Zender, F. Wendt, F. Gewers, E. Pearce, S. Ramelow, K. Paschke

Long wavelength, small quantum interferometer module: shrinking MIR OCT systems via quantum entanglement

Proc. of SPIE, vol. 13392, Quantum Sensing, Imaging, and Precision Metrology III, Photonics West, San Francisco, USA, Jan 17-22, 133920V (2025).

P. Hildenstein, G. Blume, A. Sahm, N. Werner, D. Feise, A. Sherwani, E. Pearce, B. Kemper, Á. Barroso, J. Schnekenburger, S. Ramelow, K. Paschke

Efficient MIR sensing with undetected photons: high brightness, miniaturized SPDC module for real world applications

Proc. of SPIE, vol. 13392, Quantum Sensing, Imaging, and Precision Metrology III, Photonics West, San Francisco, USA, Jan 17-22, 133921B (2025).

P. Crump, L. Mawst, S. Mcdougall, S. Noda, S. Reitzenstein, S. Sweeney, E. Tournie, Y. Wan

Editorial

IEEE J. Sel. Top. Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, art. 1502512 (2025).

P. Crump, A. Boni, M. Elattar, S.K. Khamari, I.P. Marko, S.J. Sweeney, S. Arslan, B. King, Md.J. Miah, D. Martin, A. Knigge, P. Della Casa, and G. Tränkle

Power and Efficiency Scaling of GaAs-Based Edge-Emitting High-Power Diode Lasers

IEEE J. Sel. Top. Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, art. 1502512 (2025).

M. Elattar, M. Hübner, M. Wilkens, A. Ginolas, and P. Crump

Finite-Element Thermal Simulation of High-Power Diode Laser Stacks for High-Duty-Cycle Pump Applications

IEEE J. Sel. Top. Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, art. 1500407 (2025).

F. Mauerhoff, P. Hildenstein, A. Maaßdorf, D. Feise, N. Werner, J. Glaab, G. Blume, and K. Paschke

GaAs Based Edge Emitters at 626 nm, 725 nm and 1180 nm

IEEE J. Sel. Top. Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, art. 1500710 (2025).

H. Christopher, N. Ammouri, M. Beier, J. Fricke, A. Ginolas, J.-P. Koester, A. Liero, A. Maaßdorf, S. Nozinic, H. Wenzel, and A. Knigge

Wavelength-Stabilized Multi-Active Region DBR and DFB Broad-Area and Ridge-Waveguide Lasers for High Peak-Power Pulsed Operation

IEEE J. Sel. Top. Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, art. 1501510 (2025).

B. Stray, X. Bosch-Lluis, R. Thompson, C. Okino, N. Yu, N. Lay, B. Muirhead, J. Hyon, H. Leopardi, P. Brereton, A. Mylapore, B. Loomis, S. Luthcke, P. Ghuman, S. Bettadpur, M.D. Lachmann, T. Stolz, C. Kuehl, D. Weise, H. Ahlers, C. Schubert, A. Bawamia and S.-W. Chiow

Quantum gravity gradiometry for future mass change science

EPJ Quantum Technol., vol. 12, art. 35, doi:10.1140/epjqt/s40507-025-00338-1 (2025).

M. Radziunas, H. Wenzel, B. King, P. Crump, and E. Kuhn

Dynamical simulations of single-mode lasing in large-area all-semiconductor PCSELs

Opt. Lett., vol. 50, no. 6, pp. 1953-1956 (2025).

O. Fartmann, M. Jutisz, A. Mahdian, V. Schkolnik, I.C. Tietje, C. Zimmermann and M. Krutzik

Ramsey-Bordé atom interferometry with a thermal strontium beam for a compact optical clock

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Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage

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Towards an EPR on a Chip Spectrometer for Monitoring Radiation Damage During X‑ray Absorption Spectroscopy

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