A Novel Dual Function Receiver-Backscatterer at mm-Wave Using an ADC Front end
P. Manchanda1, P. Tschammer2, C. Andrei1,2, U. Rohde1,3,4, and M. Rudolph1,2
Published in:
IEEE MTT-S Radio Frequency Systems and Applications Symposium (IMS RFSA), Boston, USA, Jun. 7-12, ISBN 979-8-3315-4768-4, pp. 19-22, doi:10.1109/IMSRFSA70221.2026.11624203 (2026).
Abstract:
This work presents a concept for a mm-wave backscatterer based on a single III-V diode detector, whose load impedance is actively controlled using the internal states of a commercially available ADC. By periodically switching the buffer and PGA (Programmable Gain Amplifier) configurations, the ADC presents two distinct input impedances to the diode, enabling reflection based modulation without any external RF switches or active high-frequency circuitry. Extensive measurements from 1 to 40GHz demonstrate consistent two state separation, with the strongest modulation occurring at a bias of 0.5V. A maximum modulation index of |ΔΓ|2/4 ≈ 0.40 is achieved at 35GHz, confirming the feasibility of diode–ADC co-design for mm-wave backscatter. The proposed architecture significantly simplifies backscatter transmitter design and establishes a promising pathway toward highly integrated, low power, multi-functional RF sensing and communication nodes.
1 Brandenburg University of Technology Cottbus-Senftenberg, Germany
2 Ferdinand-Braun-Institute for High-Frequency Technology, Germany
3 Universität der Bundeswehr, Germany
4 MIT Microsystems Technology Laboratories, USA
Keywords:
Backscatter communication, mm-wavemodulation, impedance modulation, reconfigurable receivers, RF tag
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