Single GaN Schottky Diode 5.8 GHz Rectifier Module Achieving High Efficiency Over an Extremly Wide RF Input Power Range

A. Schumann, S.A. Chevtchenko, and A. Wentzel

Published in:

IEEE MTT-S Radio Frequency Systems and Applications Symposium (IMS RFSA), vol. Boston, USA, Jun. 7-12, ISBN 979-8-3315-4768-4, pp. 268, doi:10.1109/IMSRFSA70221.2026.11624201 (2026).

Abstract:

This paper presents a highly-efficient hybrid single-diode rectifier module for the 5.8 GHz band providing a high power conversion efficiency (PCE) over a very wide RF input power range. The input band-pass, the output low-pass as well as the middle branch higher harmonics filter are realized on a PCB. The GaN Schottky barrier diode (SBD) developed at the Ferdinand-Braun-Institut (FBH) is bonded in shunt configuration via gold bond ribbons to the board. The rectifier achieves at a load resistance of 90 Ω a maximum PCE of 68.3 % for an available RF input power of 38 dBm, converted to a DC output voltage of 19.7 V. The most remarkable feature of the developed rectifier is that it shows a PCE of > 60 % across a very wide RF input power range of 25–40 dBm. This is at least 3 dB more than all other single GaN SBD realizations published so far.

Ferdinand-Braun-Institut (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

Keywords:

GaN, Schottky barrier diode (SBD), rectifier, conversion, efficiency, high power, wireless power transfer (WPT)

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