25 GHz MMIC oscillator fabricated using commercial SiGe-HBT process
H. Kuhnert*, W. Heinrich*, W. Schwerzel**, A. Schüppen**
Published in:
Electron. Lett., vol.36, no. 3, pp. 218-220 (2000).
Abstract:
Monolithically integrated 17 and 25 GHz SiGe-HBT oscillators are presented. The monolithic microwave integrated circuits (MMICs) are fabricated using the commercially available TEMIC SiGe process. The oscillators deliver 8 dBm output power at 17 GHz and 1.2 dBm at 25 GHz with phase noise < -90dBc/Hz at 100 kHz offset, which are record values for MMICs on low-resistivity silicon substrate.
* Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
** TEMIC Semiconductor GmbH, Theresienstr. 2, 74025 Heilbronn, Germany
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