Mode-locked InGaAs-AlGaAs disk laser generating sub-200-fs pulses, pulse picking and amplification by a tapered diode amplifier
P. Klopp1, U. Griebner1, M. Zorn2, A. Klehr2, A. Liero2, M. Weyers2, and G. Erbert2
Published in:
Opt. Express, vol. 17, no. 13 pp. 10820-10834 (2009).
Abstract:
Almost chirp-free pulses with a duration of 190 fs were achieved from a mode-locked semiconductor disk laser (SDL) emitting at ≈1045 nm. Pulse shaping was different from the soliton-like mode-locking process known from lasers using dielectric gain media; passive amplitude modulation provided by a fast saturable absorber was essential. The spectrum of the absorber had to be matched to the gain spectrum within a few nm. A tapered diode amplifier was demonstrated to be a device for both picking and amplifying SDL pulses. The pulse repetition rate of the SDL output was reduced from 3 GHz to 47 MHz.
1 Max Born Institute, Max-Born-Str. 2a, 12489 Berlin, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
OCIS codes:
(140.3480) Lasers, diode-pumped; (140.4050) Mode-locked lasers; (140.5960) Semiconductor lasers; (140.7260) Vertical cavity surface emitting lasers.
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