B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, J. Fricke, P. Ressel, H. Wenzel, G. Erbert, G. Tränkle

Published in:

Proc. SPIE, vol. 7230, no. 72301E (2009).

Abstract:

High-brightness narrow line-width 1060 nm tapered lasers with an internal distributed Bragg reflector were realized. The devices reach a maximal output power of 12 W with a narrow spectral line-width below 40 pm (95% power). A nearly diffraction limited beam quality was measured up to a power of 10 W. The vertical structure is based on an InGaAs triple quantum well (TQW) active region embedded in a 4.8 µm broad AlGaAs super large optical cavity. This leads to a narrow vertical divergence of 15° (FWHM). Tapered devices were processed a total length of 6 mm consisting of 2 mm long ridge waveguide (including 1 mm DBR mirror) and 4 mm tapered sections. A full taper angle of 6° was manufactured. The input currents to both sections can be independently controlled. The devices had a conversion efficiency of about 50%. A first reliability test showed failure-free operation at 5 W without a deterioration of the beam quality and the spectral properties.

Keywords:

Semiconductor lasers, Tapered lasers, NIR lasers, DBR lasers.

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